NCSR - Demokritos
Welcome to the Institute of Microelectronics (IMEL) / NCSR "Demokritos"
Personnel of IMEL Dr Vasilios Ioannou-Sougleridis

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Dr Vasilios Ioannou-Sougleridis
Dr. Vasilios Ioannou Sougleridis
 

Contact Information
Dr Vasilios Ioannou-Sougleridis
Researcher
P.O.Box 60228
153 10 Aghia Paraskevi
Athens - GREECE

Email:
Tel: +30-2106503240
Fax: +30-2106511723

Short CV

Dr. Vassilios Ioannou-Sougleridis received his B.Sc. in Physics in 1985 from the Physics department of Athens University (Greece), the M.Sc. degree from Brunel University (United Kingdom) in semiconductor science and technology in 1987 and his Ph.D. degree in the field of semiconductor and device physics from the Physics Department of Athens University in 1993. The Ph.D. thesis was “Study of point defects in SIMOX structures”. Since 1995 he joined the Institute of Microelectronics of National Center of Scientific Research “Demokritos” where he worked within the frame of several European Union projects such as the MELARI-SMILE (1997-2000), the FORUM-FIB (2002-2005) and the DUALLOGIC (2007-2010) with primary tasks the exploration of silicon nanoparticles properties embedded within an insulating matrix for light emission, the fabrication and characterization of silicon nanocrystal memory devices, and the exploitation of high performance logic devices, respectively. Since 2005 he holds a position of researcher in the Institute of Microelectronics and his main research interests are charge trapping memory devices for non-volatile memory applications and integration issues of high mobility substrates. His expertise includes processing and fabrication of dielectric gate stacks on semiconductor substrates, high-k oxide dielectrics, electrical and electronic properties of dielectric materials on semiconductor substrates, materials characterization and device electrical testing.

PROFESSIONAL EXPERIENCE

  • 2005 – present/ Researcher, Institute of Microelectronics, NCSR “Demokritos”, Greece
  • 2003 – 2005/ Research Fellow, Institute of Microelectronics, NCSR “Demokritos” , Greece
  • 1999 – 2003/ Post Doctoral Fellow, Institute of Microelectronics, NCSR “Demokritos” , Greece
  • 1996-1999/ Research Fellow, Institute of Microelectronics, NCSR “Demokritos” , Greece
  • 1992-1993/ Military Service, Greek Army,
  • 1988 – 1992/ Post graduate Fellow, Institute of Microelectronics, NCSR “Demokritos”, Greece

Scientific activity

  • Journal papers 38
  • Conference proceedings 25
  • Participation in international conferences 45
  • Citations >350
  • Participation in 13 EU and Greek research projects.
  • 1 Greek patent “method of oxidizing silicon nitride materials at low thermal budgets”

Specific topics of scientific activity

A. Germanium integration technology

  • Fabrication and characterization of Ge p+/n and n+/p diodes at low temperatures utilizing metal induced dopant activation

B. Charge trapping devices for non-volatile memory applications

  • Study of the influence of the high-k dielectric ALD precursor and the oxygen source on the electrical properties of SONOS type charge trapping devices.
  •  Low energy ion beam modification of SiO2/Si3N4/Al2O3 gate stacks. Structural and electrical properties.
  •  Thermal oxidation of low-energy silicon implanted SiO2/Si3N4 gate stacks. Structural and electrical properties.
  • Formation, structural and electrical properties of silicon nanoparticles in Si3N4 using low-energy silicon ion implantation.
  • Formation, structural and electrical properties of silicon nanocrystals in SiO2 using LPCVD of silicon and subsequent oxidation

C. High-k dielectric on silicon substrates

  • Growth, structural and electrical characterization of Y2O3 films on silicon substrates.

D. High mobility silicon substrates

  • Oxidation studies of ultra-thin strained silicon layer on relaxed SiGe virtual substrates.

Representative journal papers

1. V. Ioannou-Sougleridis, G.J. Papaioannou, P. Dimitrakis and S. Cristoloveanu “Characterization of the buried oxide in SIMOX structures by a rate window method” Journal of Applied Physics 74, 3298, (1993).

2. V. Ioannou-Sougleridis, T. Ouisse, A.G. Nassiopoulou, F. Bassani and F. Arnaud d’Avitaya “Nonlinear electrical transport in nc-Si/CaF2 multilayer structures with ultrathin CaF2 layers” Journal of Applied Physics 89, 601, (2001).

3. V. Ioannou-Sougleridis, A.G. Nassiopoulou, T. Ouisse, F. Bassani and F. Arnaud d’Avitaya “Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices”Applied Physics Letters 79, 2076, (2001).

4. V. Ioannou-Sougleridis, G. Vellianitis and A. Dimoulas “Electrical properties of Y2O3 high κ-gate dielectric on Si (100): The influence of post metallization annealing” Journal of Applied Physics 93, 3982, (2003).

5. V. Ioannou-Sougleridis and A.G. Nassiopoulou. “Investigation of charging phenomena in silicon nanocrystal metal-oxide-semiconductor capacitors using ramp current-voltage measurements” Journal of Applied Physics 94, 4084, (2003).

6. V. Ioannou-Sougleridis, V. Constandoudis, M. Alexe, R. Scholz, G. Vellianitis and A. Dimoulas “Effects of post-growth annealing experiments in epitaxial Y2O3 layers on Si (001).” Thin Solid Films 468 (1-2), 303 (2004).

7. V. Ioannou-Sougleridis, P. Dimitrakis, V.E. Vamvakas, P. Normand, Bonafos C, S. Schamm,A. Mouti, B. Assayag and V. Paillard “Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis” Nanotechnology 18 (21), art. no. 215204 (2007).

8. V. Ioannou-Sougleridis, P. Dimitrakis, V.E. Vamvakas, P. Normand, Bonafos C, S. Schamm,N. Cherkashin, B. Assayag M. Perego and M. Fanciulli “Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks” Applied Physics Letters 90 (26), art. no. 263513 (2007).

9. V. Ioannou-Sougleridis, N. Keiladis, C. Tsamis, D. Skarlatos, C.A. Krontiras, S.N. Georga, Ph. Komninou, B. Kellerman, and M. Seacrist, “Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers” Journal of Applied Physics 105, 114503 (2009).

10. V. Ioannou-Sougleridis and A.G. Nassiopoulou “Dynamic charge transfer effects in two-dimensional silicon nanocrystal layers embedded within SiO2” Journal of Applied Physics 106, 054508 (2009).

 

 


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NCSR - Demokritos