Representative journal papers
1. V. Ioannou-Sougleridis, G.J. Papaioannou, P. Dimitrakis and S. Cristoloveanu “Characterization of the buried oxide in SIMOX structures by a rate window method” Journal of Applied Physics 74, 3298, (1993).
2. V. Ioannou-Sougleridis, T. Ouisse, A.G. Nassiopoulou, F. Bassani and F. Arnaud d’Avitaya “Nonlinear electrical transport in nc-Si/CaF2 multilayer structures with ultrathin CaF2 layers” Journal of Applied Physics 89, 601, (2001).
3. V. Ioannou-Sougleridis, A.G. Nassiopoulou, T. Ouisse, F. Bassani and F. Arnaud d’Avitaya “Electroluminescence from silicon nanocrystals in Si/CaF2 superlattices”Applied Physics Letters 79, 2076, (2001).
4. V. Ioannou-Sougleridis, G. Vellianitis and A. Dimoulas “Electrical properties of Y2O3 high κ-gate dielectric on Si (100): The influence of post metallization annealing” Journal of Applied Physics 93, 3982, (2003).
5. V. Ioannou-Sougleridis and A.G. Nassiopoulou. “Investigation of charging phenomena in silicon nanocrystal metal-oxide-semiconductor capacitors using ramp current-voltage measurements” Journal of Applied Physics 94, 4084, (2003).
6. V. Ioannou-Sougleridis, V. Constandoudis, M. Alexe, R. Scholz, G. Vellianitis and A. Dimoulas “Effects of post-growth annealing experiments in epitaxial Y2O3 layers on Si (001).” Thin Solid Films 468 (1-2), 303 (2004).
7. V. Ioannou-Sougleridis, P. Dimitrakis, V.E. Vamvakas, P. Normand, Bonafos C, S. Schamm,A. Mouti, B. Assayag and V. Paillard “Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis” Nanotechnology 18 (21), art. no. 215204 (2007).
8. V. Ioannou-Sougleridis, P. Dimitrakis, V.E. Vamvakas, P. Normand, Bonafos C, S. Schamm,N. Cherkashin, B. Assayag M. Perego and M. Fanciulli “Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks” Applied Physics Letters 90 (26), art. no. 263513 (2007).
9. V. Ioannou-Sougleridis, N. Keiladis, C. Tsamis, D. Skarlatos, C.A. Krontiras, S.N. Georga, Ph. Komninou, B. Kellerman, and M. Seacrist, “Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers” Journal of Applied Physics 105, 114503 (2009).
10. V. Ioannou-Sougleridis and A.G. Nassiopoulou “Dynamic charge transfer effects in two-dimensional silicon nanocrystal layers embedded within SiO2” Journal of Applied Physics 106, 054508 (2009).