The Microelectronics Research Group (MRG) started its activities in 1986 with the establishment of a laboratory for the growth of III-V compound semiconductors (arsenides) by Molecular Beam Epitaxy (MBE). Since then it has expanded to MBE growth of wide-bandgap semiconductors (SiC and III-nitrides), to materials characterization, as well as to the design, processing and characterization of semiconductor devices and integrated circuits.

It has thus become a complete, diverse, advanced compound semiconductor micro/nanoelectronics group.

Main goals of the MRG's research are:

• Development of innovative semiconductor nanostructure/heterostructure materials, devices and circuits for high frequency, high power electronics and optoelectronics

• Accumulation of know-how and training of scientific personnel to support industrial activities in Europe and Greece

Recent and current research efforts of MRG are within the following four areas:

• GaAs micro(opto-)electronics (MBE, III-V/Si integration, tunable laser diodes sensors, RF MEMS, MMICs)

• GaN and related materials and devices (MBE, HFETs,

• InAlGaN QW heterostructures – lasers, CHEMFETs)

• SiC microelectronics (MBE, p-i-n, Zener and IMPATT diodes)

• Semiconductor nanostructures (MBE, physics of quantum dots)

To exploit its accumulated expertise, the group has launched a microelectronics services activity providing epitaxial wafers, processing and measurements. The latter two are ISO 9001 certified.

Visit the Website ...