Objectives

Project I.3: Front-end processes for Micro and Nanodevices

Objectives

Study of dopant diffusion/activation and point/extended defect kinetics in Group-IV semiconductors (Silicon, Strained Silicon, Germanium) for CMOS applications
Thermal processes for ultra-thin gate dielectrics (oxides, oxynitrides) in Group-IV semiconductors for CMOS applications
Process optimization for Nanodevices (Fabrication, Electrical Characterization)
Continuum and atomistic simulation of processes and devices


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