Contact Information Dr Panagiotis Dimitrakis Research staff P.O.Box 60228 153 10 Aghia Paraskevi Athens - GREECE Email:           pdimit[at]ieee.org Tel: +30-210-6503118 Fax: +30-2106511723

EDUCATION

• B.Sc. in Physics, University of Athens, Physics Department, Greece, 1995
• M.Sc. in Condensed Mater Physics, University of Athens, Physics Department, Greece, 1997
• Ph.D., National Technical University of Athens, Department of Applied Physics, Greece, 2006 (Thesis title “Nanoparticles for Electronics”)

PROFESSIONAL EXPERIENCE

• 2011 - present, Cleanroom Facility Manager, Research Staff, Department of
  Microelectronics, Institute of Advanced Materials, Physicochemical
  Processes, Nanotechnology & Microsystems, NCSR “Demokritos”
• 2007 – 2011, Electrical Characterization Facility Manager, Research Staff,
  Institute of Microelectronics, NCSR “Demokritos”
• 2004 - 2006, PhD Candidate Fellow, National Technical University of Athens
  and Institute of Microelectronics, NCSR “Demokritos”
• 2001 - 2004, Institute of Microelectronics, NCSR “Demokritos”, Greece
• 2001 – 2007, Lecturer Laboratory Physics, Technological Educational
  Institute of Athens,
• 2000-2001, Research Associate, Institute of Electronic structure and Lasers,
  Foundation of Research and Technology Hellas (IESL-FORTH)
• 1998 – 2000, Military Service (Infantry Second Lieutenant, Hellenic Army
  Research & Technology Office)

PROJECT COORDINATION

“Graphene controlled electrochemical interfaces for nanoscaled ReRAM devices (GReRAM)”,
Greek-German Bilateral Research Projects, 2013-2015 (200.000 Euro)RESEARCH TRIPS

PARTICIPATION IN EUROPEAN RESEARCH PROJECTS

1. GROWTH – NEON (Nanoparticles for Electronic Applications) [1/2/2001-
   30/12/2004], Research Associate. The scope of the project was to develop
   SiNC-NVMs by Ultra-Low-Energy Ion-Beam-Synthesis technique and make
   the technology transfer to STMicroelectronics, Agrate, Italy. The first Si-NCNVM
   cells by ULE-IBS were demonstrated and manufactured by ST.
2. FET – FRACTURE (Nanoelectronic Devices and Fault-Tolerant Architecture),
   [1/1/2001 – 31/12/2003], Research Associate. The scope of the project was to
   realize hybrid organic/Si memory cells.
3. ESA – QD-GAN- RTD (Investigations of the use of III-Nitrides Quantum Dot-
   RTD structures as UV-VIS tunable photodetectors), [28/11/2007 –
   31/10/2008] Principal Investigator. The scope of the project was to realize a
   Resonant Tunneling Diode with GaN QDs for spectroscopic applications.
4. REGPOT-MiNaSys-CoE (Micro and Nano Systems - Center of Excellence),
   [2009-2012], Researcher. The scope of the project was to install a high
   resolution e-beam lithography system.

PARTICIPATION IN NATIONAL RESEARCH PROJECTS

1. “Nanoparticles for Electronics”, GSRT-HERAKLEITOS I, (2003-2005),
   Research Associate
2. “Memory characteristics of pure polymeric materials and polymer/metal
   nanoparticles blends”, GSRT-Bilateral Greece-UK 2003 [2004-2006],
   Research Associate
3. “Si-Nanocrystal Synthesis by Plasma-Immersion Ion-Implantation”, GSRTBilateral
   Greece-France 2005-2007, Researcher
4. “Process Technology Development for new photovoltaics based on Si
   nanomaterials”, GSRT-SYNERGASIA, Researcher
5. “Spontaneous growth, properties and devices of III-V semiconductor
   nanowires” (NanoWIRE)”, GSRT-THALIS, Researcher (2012-2015)
6. “Plasma directed assembly of nanostructures and applications” (Plasma
   NanoFactory)(http://www.imel.demokritos.gr/projects/plasmananofactory/index.php/en/),
   GSRT-ARISTEIA I (2012-2014)
7. “3-D Junctionless Si-Nanowire Memory Devices” (NanoWireMemory), GSRTARISTEIA
   II (2013-2015)
8. “Nanoparticle Assemblies for Resistive Memories» (NanoARM), GSRTARISTEIA
   II (2013-2015)

RESEARCH TRIPS

• 14/8 – 14/9/2006: Visitor Research Scientist at Centre of Molecular and
  Nanoscale Electronics, University of Durham, Durham, UK
• 3/9 – 16/11/1997: Visitor Postgraduate Fellow at Laboratoire de Physique des
  Composants a Semiconducteurs, ENSERG, Institut National Polytechnique,
  Grenoble, FRANCE

PROFESSIONAL MEMBERSHIPS

• Member of Institute of Electron and Electronic Engineers (IEEE), Life-member of Electron Device Society
• Member of Material Research Society (MRS)

RESEARCH INTERESTS

• Graphene-based devices and related technology
• Nanowire transistors
• Quantum-dots for memory devices
• Charge storage memory devices utilizing novel gate dielectric stacks
• Molecular and Hybrid Organic-Inorganic Memory devices (e.g., BistableResistive NVM devices)
• Quantum Dots for Electronic and Optoelectronic applications
• Silicon-On-Insulator

RESEARCH ACHIEVEMENTS

• A hybrid memory of nanoparticles”, Materials Today, Vol. 6(12), 7 (2003)
  (http://www.sciencedirect.com )
• Invitated to Intel® 10th EMEA Academic Forum (Poland, 2005)
• Best Poster Award, Micro & Nano–Engineering, Vienna, 2005 (http://www.mne05.org/poster_winner3.html )
  PUBLICATIONS – PATENTS – RESEARCH METRICS

PUBLICATIONS – PATENTS – RESEARCH METRICS

(www.researcherid.com/rid/B-1789-2008)

• 50 articles in international peer-review journals
• 65 paper and conference announcements (peer-review)
• 840 citations (h–index:14 Scopus), 773 citations (h–index:14, ISI)
• 7 invited talks in International Conferences
• 2 invited tutorial talks in International Conferences
• Reviewer in several international journals of AIP, Elsevier, IOP and IEEE
• 1 Patent GR1005905 (B2) ¯ 2008-05-15 “Method of Oxidizing silicon nitride
  materials at low thermal budgets.”

BOOK EDITING AND CHAPTERS

• C. Bonafos, Y. Fujisaki, P. Dimitrakis, E. Tokumitsu, «Materials and Physics
  of Nonvolatile Memories II» Mater. Res. Soc. Symp. Proc. Vol. 1250,
  Warrendale, PA, 2010
• D. Wouters, E. Tokumitsu, O. Auciello, P. Dimitrakis, Y. Fujisaki, «New
  Functional Materials and Emerging Device Architectures for Nonvolatile
  Memories» Mater. Res. Soc. Symp. Proc. Vol. 1337, Warrendale, PA, 2011
• Y. Fujisaki, P. Dimitrakis, E. Tokumitsu, M. Kozicki, «Materials and Physics of
  Emerging Nonvolatile Memories» Mater. Res. Soc. Symp. Proc. Vol. 1430,
  Warrendale, PA, 2012
• P. Dimitrakis, P. Normand and D. Tsoukalas, Silicon Nanocrystal Memories,
  Ch. 8 (pp.211-241), Silicon Nanopthonics, ed. L.Khriachtchev (ISBN-13
  978-981-4241-11-3), World Scientific Publishing (Singapore, 2008)
• P. Dimitrakis, S. Schamm-Chardon, C. Bonafos, P. Normand, Nanoparticle-
  Based Memories: Concept and Operation Principles, Ch. 2, Applications of
  Nanomaterials, Eds. R.S. Chaughule and S.C. Watawe, American Scientific
  Publishers. ISBN: 1-58883-181-7 (2011)

CONFERENCE ORGANIZATION

• ESSDERC/ESSCIRC 2009, Poster session, 14-18 September, Athens,
  Greece
• International Workshop on “Nanotechnology for electronic and photonic
  applications”, 18 September 2009, Athens, Greece
• MRS Spring Meeting 2010, Symposium G “Materials and Devices for Non-
  Volatile Memories”, 5-9 April San Francisco, USA
• MRS Spring Meeting 2011, Symposium Q “New Functional Materials and
  Emerging Device Architectures for Nonvolatile Memories”, 25-29 April San
  Francisco, USA
• MRS Spring Meeting 2012, Symposium E «Materials and Physics of
  Emerging Nonvolatile Memories», 9-13 April San Francisco, USA
• MRS Spring Meeting 2013, Symposium DD “Emerging Materials and
  Devices for Future Nonvolatile Memories”, 1-5 April San Francisco, USA
• International Workshop on “Nanowires and Nanostructures: Fabrication,
  Characterization, Applications”, 4th International Conference from
  Nanoparticles and Nanomaterials to Nanodevices and Nanosystems, IC4N
  2013, June 6-13, Corfu, Greece
• Workshop on Compound Semiconductor Devices and Integrated
  Circuits (WOCSDICE) 2014, 15 - 18th June 2014, Delphi, Greece
• MRS Spring Meeting 2014, Symposium M “Materials and Technology for
  Nonvolatile Memories”, 30 November - 5 December Boston, USA
• Member of the International Technical Program Committee, Micro & Nano
  Engineering (MNE) 2008, 2009, 2010, 2011, 2012, 2013,2014
• Member of the International Scientific Committee, E-MRS 2012 Spring
  Meeting, Symposium L, “Novel Functional Materials and Nanostructures for
  innovative non-volatile memory devices”, May 14-18, Strasbourg, France
• Member of the International Scientific Committee, E-MRS 2014 Fall Meeting,
  Symposium B, “Organized nanostructures and nano-objects: fabrication,
  characterization and applications”, September 15-19, Warsaw University of
  Technology, Poland

SELECTED PUBLICATIONS

• P. Dimitrakis, E. Kapetanakis, P. Normand, D. Skarlatos, D. Tsoukalas, K.
  Beltsios, A. Claverie, G. Benassayag, C. Bonafos, D. Chassaing, V. Soncini,
  “MOS Memory Structures by Very-Low Energy Implantated Si in thin SiO2”,
  Material Science & Engineering B, 101, 14-18 (2003)
• S.Paul, C. Pearson, A. Molloy, M. A. Cousins, M. Green, S. Kolliopoulou,
  P. Dimitrakis, P. Normand, D. Tsoukalas and M. C. Petty, “Langmuir-Blodgett
  Film Deposition of Metallic Nanoparticles and their Application to Electronic
  Memory Structures”, Nano Letters, 3(4), 533-536 (2003)
• S. Kolliopoulou, P. Dimitrakis, P. Normand, H. L. Zhang, N. Cant, S. D.
  Evans, S. Paul, C. Pearson, A. Molloy, M. C. Petty and D. Tsoukalas, “A
  hybrid silicon-organic nanoparticle memory device”, Journal of Applied
  Physics 94 (8), 5234 (2003)
• P. Dimitrakis, E. Kapetanakis, D. Tsoukalas, D. Skarlatos, C. Bonafos, G.
  Ben Asssayag, A. Claverie, M. Perego, M. Fanciulli, V. Soncini, R. Sotgiu, A.
  Agarwal, M. Ameen, P. Normand, “Silicon nanocrystal memory devices
  obtained by ultra-low-energy ion-beam-synthesis”, Solid-State Electronics, 48,
  1511-1517, (2004)
• C. Bonafos, M. Carrada, N. Cherkashin, H. Coffin, D. Chassaing, G. Ben
  Assayag, A. Claverie, T. Müller, K. H. Heinig, M. Perego, M. Fanciulli, P. Dimitrakis,
  and P. Normand, “Manipulation of two-dimensional arrays of Si
  nanocrystals embedded in thin SiO2 layers by low energy ion implantation”,
  Journal of Applied Physics 95 (10), 5696-5702 (2004)
• P. Dimitrakis, P. Normand, “Parasitic memory effects in shallow-trenchisolated
  nanocrystal memory devices”, Solid-State Electronics 51, 125-136
  (2007)
• V. Ioannou-Sougleridis, P. Dimitrakis, V.E. Vamvakas, P. Normand, C.
  Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag, M. Perego, M.
  Fanciulli, "Wet oxidation of nitride layer implanted with low-energy Si ions for
  improved oxide-nitride-oxide memory stacks", Applied Physics Letters 90,
  263513 (2007)
• P. Dimitrakis, P. Normand, D. Tsoukalas, C. Pearson, J. H. Ahn, M. F.
  Mabrook, D. A. Zeze, M. C. Petty, K. T. Kamtekar, C. Wang, M. R. Bryce and
  M. Green, “Electrical behaviour of memory devices based on fluorinecontaining
  organic thin films”, Journal of Applied Physics, 104, 044510 (2008
• P. Dimitrakis, A. Mouti, C. Bonafos, S. Schamm G. Ben Assayag, V.
  Ioannou-Sougleridis, B. Schmidt, J. Becker, P. Normand, “Ultra-low-energy
  ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory
  applications”, Microelectronic Engineering 86, 1838-1841 (2009)
• V. Ioannou-Sougleridis, N. Kelaidis, D. Skarlatos, C. Tsamis, S.N. Georga,
  C.A. Krontiras, Ph. Komninou, Th. Speliotis, P. Dimitrakis, B. Kellerman, M.
  Seacrist, M. “Influence of thermal oxidation on the interfacial properties of
  ultrathin strained silicon layers”, Thin Solid Films, 519, 5456-5463 (2011)
• Ν. Nikolaou, P. Dimitrakis, P. Normand, V. Ioannou-Sougleridis, K.
  Giannakopoulos, K. Mergia, K. Kukli, J. Niinisto, M. Ritala, M. Leskela,
  “Influence of atomic layer deposition chemistry on high-k dielectrics for charge
  trapping memories”, Solid-State Electronics, 68, 38-47 (2012)
• R. Diaz, J. Grisolia, G. BenAssayag, S. Schamm-Chardon, C. Castro, B.
  Pecassou, P. Dimitrakis, P. Normand, “Extraction of the characteristics of Si
  nanocrystals by the charge pumping technique”, Nanotechnology, 23, 085206
  (2012)
• C. Bonafos, M. Carrada, G. Benassayag, S. Schamm-Chardon, J. Groenen,
  V. Paillard, B. Pecassou, A. Claverie, P. Dimitrakis, E Kapetanakis, V.
  Ioannou-Sougleridis, P. Normand, B. Sahu, A Slaoui, “Si and Ge nanocrystals
  for future memory devices”, Materials Science in Semiconductor Processing,
  15, 615-626 (2012)
• P. Dimitrakis, P. Normand, C. Bonafos, E. Papadomanolaki, and E.
  Iliopoulos, “GaN quantum-dots integrated in the gate dielectric of metal-oxidesemiconductor
  structures for charge-storage applications”, Appl. Phys. Lett.
  102, 053117 (2013)
• P. Dimitrakis, P. Normand, V. Ioannou-Sougleridis, C. Bonafos, S. Schamm-
  Chardon, G. Benassayag, E. Iliopoulos, “Quantum dots for memory
  applications”, Physica Status Solidi (A) 210, 1490-1504 (2013)