NCSR - Demokritos
Welcome to the Institute of Microelectronics (IMEL) / NCSR "Demokritos"
Personnel of IMEL Dr Panagiotis Dimitrakis

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Dr Panagiotis Dimitrakis


Contact Information
Dr Panagiotis Dimitrakis
Research staff
P.O.Box 60228
153 10 Aghia Paraskevi
Athens - GREECE

Tel: +30-210-6503118
Fax: +30-2106511723



  • 2011 - present, Cleanroom Facility Manager, Research Staff, Department of
    Microelectronics, Institute of Advanced Materials, Physicochemical
    Processes, Nanotechnology & Microsystems, NCSR “Demokritos”
  • 2007 – 2011, Electrical Characterization Facility Manager, Research Staff,
    Institute of Microelectronics, NCSR “Demokritos”
  • 2004 - 2006, PhD Candidate Fellow, National Technical University of Athens
    and Institute of Microelectronics, NCSR “Demokritos”
  • 2001 - 2004, Institute of Microelectronics, NCSR “Demokritos”, Greece
  • 2001 – 2007, Lecturer Laboratory Physics, Technological Educational
    Institute of Athens,
  • 2000-2001, Research Associate, Institute of Electronic structure and Lasers,
    Foundation of Research and Technology Hellas (IESL-FORTH)
  • 1998 – 2000, Military Service (Infantry Second Lieutenant, Hellenic Army
    Research & Technology Office)


“Graphene controlled electrochemical interfaces for nanoscaled ReRAM devices (GReRAM)”,
Greek-German Bilateral Research Projects, 2013-2015 (200.000 Euro)RESEARCH TRIPS


  1. GROWTH – NEON (Nanoparticles for Electronic Applications) [1/2/2001-
    30/12/2004], Research Associate. The scope of the project was to develop
    SiNC-NVMs by Ultra-Low-Energy Ion-Beam-Synthesis technique and make
    the technology transfer to STMicroelectronics, Agrate, Italy. The first Si-NCNVM
    cells by ULE-IBS were demonstrated and manufactured by ST.
  2. FET – FRACTURE (Nanoelectronic Devices and Fault-Tolerant Architecture),
    [1/1/2001 – 31/12/2003], Research Associate. The scope of the project was to
    realize hybrid organic/Si memory cells.
  3. ESA – QD-GAN- RTD (Investigations of the use of III-Nitrides Quantum Dot-
    RTD structures as UV-VIS tunable photodetectors), [28/11/2007 –
    31/10/2008] Principal Investigator. The scope of the project was to realize a
    Resonant Tunneling Diode with GaN QDs for spectroscopic applications.
  4. REGPOT-MiNaSys-CoE (Micro and Nano Systems - Center of Excellence),
    [2009-2012], Researcher. The scope of the project was to install a high
    resolution e-beam lithography system.


  1. “Nanoparticles for Electronics”, GSRT-HERAKLEITOS I, (2003-2005),
    Research Associate
  2. “Memory characteristics of pure polymeric materials and polymer/metal
    nanoparticles blends”, GSRT-Bilateral Greece-UK 2003 [2004-2006],
    Research Associate
  3. “Si-Nanocrystal Synthesis by Plasma-Immersion Ion-Implantation”, GSRTBilateral
    Greece-France 2005-2007, Researcher
  4. “Process Technology Development for new photovoltaics based on Si
    nanomaterials”, GSRT-SYNERGASIA, Researcher
  5. “Spontaneous growth, properties and devices of III-V semiconductor
    nanowires” (NanoWIRE)”, GSRT-THALIS, Researcher (2012-2015)
  6. “Plasma directed assembly of nanostructures and applications” (Plasma
    GSRT-ARISTEIA I (2012-2014)
  7. “3-D Junctionless Si-Nanowire Memory Devices” (NanoWireMemory), GSRTARISTEIA
    II (2013-2015)
  8. “Nanoparticle Assemblies for Resistive Memories» (NanoARM), GSRTARISTEIA
    II (2013-2015)


  • 14/8 – 14/9/2006: Visitor Research Scientist at Centre of Molecular and
    Nanoscale Electronics, University of Durham, Durham, UK
  • 3/9 – 16/11/1997: Visitor Postgraduate Fellow at Laboratoire de Physique des
    Composants a Semiconducteurs, ENSERG, Institut National Polytechnique,
    Grenoble, FRANCE


  • Member of Institute of Electron and Electronic Engineers (IEEE), Life-member of Electron Device Society
  • Member of Material Research Society (MRS)


  • Graphene-based devices and related technology
  • Nanowire transistors
  • Quantum-dots for memory devices
  • Charge storage memory devices utilizing novel gate dielectric stacks
  • Molecular and Hybrid Organic-Inorganic Memory devices (e.g., BistableResistive NVM devices)
  • Quantum Dots for Electronic and Optoelectronic applications
  • Silicon-On-Insulator




  • 50 articles in international peer-review journals
  • 65 paper and conference announcements (peer-review)
  • 840 citations (h–index:14 Scopus), 773 citations (h–index:14, ISI)
  • 7 invited talks in International Conferences
  • 2 invited tutorial talks in International Conferences
  • Reviewer in several international journals of AIP, Elsevier, IOP and IEEE
  • 1 Patent GR1005905 (B2) ¯ 2008-05-15 “Method of Oxidizing silicon nitride
    materials at low thermal budgets.”


  • C. Bonafos, Y. Fujisaki, P. Dimitrakis, E. Tokumitsu, «Materials and Physics
    of Nonvolatile Memories II» Mater. Res. Soc. Symp. Proc. Vol. 1250,
    Warrendale, PA, 2010
  • D. Wouters, E. Tokumitsu, O. Auciello, P. Dimitrakis, Y. Fujisaki, «New
    Functional Materials and Emerging Device Architectures for Nonvolatile
    Memories» Mater. Res. Soc. Symp. Proc. Vol. 1337, Warrendale, PA, 2011
  • Y. Fujisaki, P. Dimitrakis, E. Tokumitsu, M. Kozicki, «Materials and Physics of
    Emerging Nonvolatile Memories» Mater. Res. Soc. Symp. Proc. Vol. 1430,
    Warrendale, PA, 2012
  • P. Dimitrakis, P. Normand and D. Tsoukalas, Silicon Nanocrystal Memories,
    Ch. 8 (pp.211-241), Silicon Nanopthonics, ed. L.Khriachtchev (ISBN-13
    978-981-4241-11-3), World Scientific Publishing (Singapore, 2008)
  • P. Dimitrakis, S. Schamm-Chardon, C. Bonafos, P. Normand, Nanoparticle-
    Based Memories: Concept and Operation Principles, Ch. 2, Applications of
    , Eds. R.S. Chaughule and S.C. Watawe, American Scientific
    Publishers. ISBN: 1-58883-181-7 (2011)


  • ESSDERC/ESSCIRC 2009, Poster session, 14-18 September, Athens,
  • International Workshop on “Nanotechnology for electronic and photonic
    applications”, 18 September 2009, Athens, Greece
  • MRS Spring Meeting 2010, Symposium G “Materials and Devices for Non-
    Volatile Memories”, 5-9 April San Francisco, USA
  • MRS Spring Meeting 2011, Symposium Q “New Functional Materials and
    Emerging Device Architectures for Nonvolatile Memories”, 25-29 April San
    Francisco, USA
  • MRS Spring Meeting 2012, Symposium E «Materials and Physics of
    Emerging Nonvolatile Memories», 9-13 April San Francisco, USA
  • MRS Spring Meeting 2013, Symposium DD “Emerging Materials and
    Devices for Future Nonvolatile Memories”, 1-5 April San Francisco, USA
  • International Workshop on “Nanowires and Nanostructures: Fabrication,
    Characterization, Applications”, 4th International Conference from
    Nanoparticles and Nanomaterials to Nanodevices and Nanosystems, IC4N
    , June 6-13, Corfu, Greece
  • Workshop on Compound Semiconductor Devices and Integrated
    Circuits (WOCSDICE) 2014
    , 15 - 18th June 2014, Delphi, Greece
  • MRS Spring Meeting 2014, Symposium M “Materials and Technology for
    Nonvolatile Memories”, 30 November - 5 December Boston, USA
  • Member of the International Technical Program Committee, Micro & Nano
    Engineering (MNE)
    2008, 2009, 2010, 2011, 2012, 2013,2014
  • Member of the International Scientific Committee, E-MRS 2012 Spring
    , Symposium L, “Novel Functional Materials and Nanostructures for
    innovative non-volatile memory devices”, May 14-18, Strasbourg, France
  • Member of the International Scientific Committee, E-MRS 2014 Fall Meeting,
    Symposium B, “Organized nanostructures and nano-objects: fabrication,
    characterization and applications”, September 15-19, Warsaw University of
    Technology, Poland


  • P. Dimitrakis, E. Kapetanakis, P. Normand, D. Skarlatos, D. Tsoukalas, K.
    Beltsios, A. Claverie, G. Benassayag, C. Bonafos, D. Chassaing, V. Soncini,
    “MOS Memory Structures by Very-Low Energy Implantated Si in thin SiO2”,
    Material Science & Engineering B, 101, 14-18 (2003)
  • S.Paul, C. Pearson, A. Molloy, M. A. Cousins, M. Green, S. Kolliopoulou,
    P. Dimitrakis
    , P. Normand, D. Tsoukalas and M. C. Petty, “Langmuir-Blodgett
    Film Deposition of Metallic Nanoparticles and their Application to Electronic
    Memory Structures”, Nano Letters, 3(4), 533-536 (2003)
  • S. Kolliopoulou, P. Dimitrakis, P. Normand, H. L. Zhang, N. Cant, S. D.
    Evans, S. Paul, C. Pearson, A. Molloy, M. C. Petty and D. Tsoukalas, “A
    hybrid silicon-organic nanoparticle memory device”, Journal of Applied
    Physics 94 (8), 5234 (2003)
  • P. Dimitrakis, E. Kapetanakis, D. Tsoukalas, D. Skarlatos, C. Bonafos, G.
    Ben Asssayag, A. Claverie, M. Perego, M. Fanciulli, V. Soncini, R. Sotgiu, A.
    Agarwal, M. Ameen, P. Normand, “Silicon nanocrystal memory devices
    obtained by ultra-low-energy ion-beam-synthesis”, Solid-State Electronics, 48,
    1511-1517, (2004)
  • C. Bonafos, M. Carrada, N. Cherkashin, H. Coffin, D. Chassaing, G. Ben
    Assayag, A. Claverie, T. Müller, K. H. Heinig, M. Perego, M. Fanciulli, P. Dimitrakis,
    and P. Normand, “Manipulation of two-dimensional arrays of Si
    nanocrystals embedded in thin SiO2 layers by low energy ion implantation”,
    Journal of Applied Physics 95 (10), 5696-5702 (2004)
  • P. Dimitrakis, P. Normand, “Parasitic memory effects in shallow-trenchisolated
    nanocrystal memory devices”, Solid-State Electronics 51, 125-136
  • V. Ioannou-Sougleridis, P. Dimitrakis, V.E. Vamvakas, P. Normand, C.
    Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag, M. Perego, M.
    Fanciulli, "Wet oxidation of nitride layer implanted with low-energy Si ions for
    improved oxide-nitride-oxide memory stacks", Applied Physics Letters 90,
    263513 (2007)
  • P. Dimitrakis, P. Normand, D. Tsoukalas, C. Pearson, J. H. Ahn, M. F.
    Mabrook, D. A. Zeze, M. C. Petty, K. T. Kamtekar, C. Wang, M. R. Bryce and
    M. Green, “Electrical behaviour of memory devices based on fluorinecontaining
    organic thin films”, Journal of Applied Physics, 104, 044510 (2008
  • P. Dimitrakis, A. Mouti, C. Bonafos, S. Schamm G. Ben Assayag, V.
    Ioannou-Sougleridis, B. Schmidt, J. Becker, P. Normand, “Ultra-low-energy
    ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory
    applications”, Microelectronic Engineering 86, 1838-1841 (2009)
  • V. Ioannou-Sougleridis, N. Kelaidis, D. Skarlatos, C. Tsamis, S.N. Georga,
    C.A. Krontiras, Ph. Komninou, Th. Speliotis, P. Dimitrakis, B. Kellerman, M.
    Seacrist, M. “Influence of thermal oxidation on the interfacial properties of
    ultrathin strained silicon layers”, Thin Solid Films, 519, 5456-5463 (2011)
  • Ν. Nikolaou, P. Dimitrakis, P. Normand, V. Ioannou-Sougleridis, K.
    Giannakopoulos, K. Mergia, K. Kukli, J. Niinisto, M. Ritala, M. Leskela,
    “Influence of atomic layer deposition chemistry on high-k dielectrics for charge
    trapping memories”, Solid-State Electronics, 68, 38-47 (2012)
  • R. Diaz, J. Grisolia, G. BenAssayag, S. Schamm-Chardon, C. Castro, B.
    Pecassou, P. Dimitrakis, P. Normand, “Extraction of the characteristics of Si
    nanocrystals by the charge pumping technique”, Nanotechnology, 23, 085206
  • C. Bonafos, M. Carrada, G. Benassayag, S. Schamm-Chardon, J. Groenen,
    V. Paillard, B. Pecassou, A. Claverie, P. Dimitrakis, E Kapetanakis, V.
    Ioannou-Sougleridis, P. Normand, B. Sahu, A Slaoui, “Si and Ge nanocrystals
    for future memory devices”, Materials Science in Semiconductor Processing,
    15, 615-626 (2012)
  • P. Dimitrakis, P. Normand, C. Bonafos, E. Papadomanolaki, and E.
    Iliopoulos, “GaN quantum-dots integrated in the gate dielectric of metal-oxidesemiconductor
    structures for charge-storage applications”, Appl. Phys. Lett.
    102, 053117 (2013)
  • P. Dimitrakis, P. Normand, V. Ioannou-Sougleridis, C. Bonafos, S. Schamm-
    Chardon, G. Benassayag, E. Iliopoulos, “Quantum dots for memory
    applications”, Physica Status Solidi (A) 210, 1490-1504 (2013)

For a full CV please click here


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NCSR - Demokritos