NANOTECHNOLOGY AND MEMS LABORATORY. ACCESS PROVIDED
The facilities and equipment of IMEL include a full silicon processing laboratory in a clean room area, equipped with lithography (optical, e- beam) and etching tools, thermal and chemical processing facilities, ion implantation, deposition of metals, dielectrics and poly- nanocrystalline silicon by physical and chemical processes (LPCVD, sputtering, e-gun and thermal evaporation), and process inspection equipment. The clean room is class 100 in the lithography area and class 1000 in the other areas. Satellite laboratories include electrical and optical characterization, micromachining and packaging laboratory, resist development laboratory, electron microscopy (SEM, STM/AFM), sensor characterization and testing equipment.
A new building of the Institute has been constructed in 2006 to host the electrical, optical and structural characterization laboratories. A photograph of the building is shown below.
The laboratory is certified under ISO 9001:2000 (Si processing and electrical characterizartion) and under ISO 17025:2005 (electrical measurements).
The equipment available and the expertise and competences include the following:
PROCESSING
Equipment |
Techniques/competences |
Silicon processing laboratory in a clean room area of 500 m2, equipped with the following:
- 4 laminar flow chemical benches
- 7 horizontal hot-wall furnace tubes
- 2 horizontal LPCVD tubes for nitride, oxide (TEOS), polysilicon
- 1 horizontal LPCVD tube for LTO
- Ion Implanter (EATON medium current, 200 KeV)
- Optical lithography systems (resolution down to 0,6 μm)
- reactive ion Etcher
- Metallization equipment
(thermal, e-gun evaporation, sputtering)
- Process inspection equipment
Processing equipment not in clean room:
- High Density Plasma Etcher
- Different thin film deposition systems
(Sputtering, MOCVD) |
- Nanopatterning technologies
- Plasma etching
- Growth of metals and dielectrics
- Growth of polycrystalline and nanocrystalline Si
- Growth of Si nanostructures embedded in a dielectric matrix, ordering of nanostructures
- Fabrication of MOS capacitors and MOSFETs
- Nanocrystal non-volatile memories
- Micromachining, sensor fabrication, microfluidics
- Molecular materials and devices
- Thin film devices
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CHARACTERIZATION & MODELLING
Equipment |
Techniques/competences |
Electrical
- Several probe stations
- HP measuring systems (4142B, 4084B, 8110A, 700i series, 4140B, 4284, 4192A, 34401, 16500A)
- Keithley measuring equipment (230, 220, 617, 195A, 6517A)
- Oxford optistat cryostat for temperatures in the range 4.2-320K
- Wafer level cryogenic measurements (Janis probe station)
- Cascade Microtech Summit 9101 Analytical Probe Station for 150mm wafers
- Anritsu 37269D Vector Network Analyzer 40MHz-40GH
Optical
- Jobin Yvon spectrometer,wavelengths 300-1600nm
- Ar+ laser
- HeCd 325 nm laser
- UV lamp with monochromator
- Oxford optistat cryostat, 4.2-320K
- FTIR: Bruker, Tensor 27
Morphology, structural characterization
Testing equipment
- Systems for testing of gas flow, gas pressure, acceleration, humidity sensors, biosensors and systems, microfluidics testing etc.
Modeling and simulation software
- SILVACO tools for process and device modeling (Athina and Atlas)
- Suprem and Pisces
- Floops and Floods
- Synopsis – Coventorware
- MATLAB-FEMlab
- Mentor graphics
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Characterization of Dielectrics
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Admittance measurements (1Hz up to 1MHz, 25-150°C)
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I-V measurements (2 up to 4-terminal devices, 25-150°C)
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Charge-to-breakdown measurements
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Bias-Temperature-Stress measurements
Characterization of MIS Devices
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Admittance measurements (1Hz up to 1MHz, 25-150°C)
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I-V measurements (2 up to 4-terminal devices, 25-150°C)
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Hot-carrier stress measurements
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Bias-Temperature-Stress measurements
EEPROM device characterization and reliability measurements
Characterization of RF components
Optical characterization
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Absorption measurements, wavelength rangeUV-VIS-IR
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Photoluminescence (PL)
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Laser excitation: 325 nm, 457.8nm, 488nm, 514.5nm
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Spectrometer: 350nm-1600nm
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Electroluminescence (EL): 350nm-1600nm
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Photocurrent-photovoltage (UV-VIS)
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FTIR
Characterterization of sensors
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Gas sensors
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Microflow sensors
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Accelerometers
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Optical devices
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Biosensors
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Microfluidics
Modeling and simulation
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ACCESS PROVIDED
Access is provided in Si processing and Electrical and Optical characterization.
The access to IMEL’s infrastructure is financially supported by the IST-I3 European Project ANNA (for more details please visit: www.i3-anna.org)
MANAGEMANT OF THE ACCESS PROVIDED
The visitors are supported by IMEL’s staff in both measurements and interpretation of their results. Test structures for electrical characterization are fabricated by IMEL’s staff in the silicon processing facility.
IMEL offers also to visitors:
- Access to guest rooms and facilities
- Training
- Modern infrastructure e.g. library, computer and electronic services
- Training, scientific and technical support for using the infrastructure
- Support for the evaluation of their results
- Logistic support
 
  
For accessing IMEL's infrastructure please contact:
Dr P.Dimitrakis (pdimit[at]imel.demokritos.gr)
or send an e-mail to services[at]imel.demokritos.gr
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NANOTECHNOLOGY AND MEMS LABORATORY. ACCESS PROVIDED
