Contact Information Dr Spiros Gardelis Senior Researcher P.O.Box 60228 153 10 Aghia Paraskevi Athens - GREECE Email: Tel: +30-2106503242 Fax: +30-2106511723

Dr. Spiros Gardelis received his BSc in Physics from the University of Athens in 1988, his MSc and PhD from the University of Manchester (formerly University of Manchester Institute of Science and Technology, UMIST) in 1989 and 1993, respectively. During 1993-1995 he worked as a Research Associate at the same Institution. Then he moved to the University of Warwick and worked as a Research Fellow during 1996. In 1997 he joined Cavendish Laboratory at the University of Cambridge as a Research Associate where he stayed until 2000. Then, he worked as a Research Associate at the Institute of Electronic Structure and Laser (IESL) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete and concurrently taught as a Visiting Associate Professor at the Materials Science Department of the University of Crete until 2004. In 2005 he joined the Institute of Microelectronics at NCSR “D” as a Researcher. Since 2011 he is a Senior Researcher.

RESEARCH INTERESTS

His current research interests are in the field of silicon nanostructures for nanoelectronics, photonics and solar cell applications. He has expertise in growth, electrical and optical measurements of silicon nanostructures. In the past, he worked in the field of spintronics, specifically on the problem of spin injection in semiconductors and on transport in low-dimensional semiconductots at cryogenic temperatures. He also gained expertise in the synthesis of complex magnetic metals and their deposition as stoichiometric thin films on semiconductors by pulsed laser deposition.

SELECTED PUBLICATIONS

• “Spin-valve effects in a semiconductor field-effect transistor: A spintronic device”, S. Gardelis, C. G. Smith, C. H. W. Barnes, E. H. Linfield, and D. A. Ritchie, Physical Review B 60, 7764 (1999)
  
  
• “Evidence for transfer of polarization in a quantum dot cellular automata cell consisting of semiconductor quantum dots”, S. Gardelis, C. G. Smith, J. Cooper, D. A. Ritchie, E. H. Linfield, and Y. Jin, Physical Review B 67, 033302 (2003) (selected for the Virtual Journal of Nanoscale Science & Technology vol. 7, issue 8 (2003)).
  
  
• “Dephasing in an isolated double-quantum-dot system deduced from single-electron polarization measurements”, S. Gardelis, C. G. Smith, J. Cooper, D. A. Ritchie, E. H. Linfield, Y. Jin, and M. Pepper, Physical Review B 67, 073302 (2003) (selected for the Virtual Journal of Nanoscale Science & Technology vol. 7, issue 4 (2003)).
  
  
• "Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition" , S. Gardelis, J. Androulakis, J. Giapintzakis, O. Monnereau, P.D. Buckle, Applied Physics Letters 85, 3178 (2004).
  
  
• "Synthesis and physical properties of arc melted NiMnSb" , S. Gardelis, J. Androulakis, P. Mygiakis and J. Giapintzakis, J. Applied Physics 95, 8063 (2004).
  
  
• “Negative giant longitudinal magnetoresistance in NiMnSb/InSb: Interface effect”,  S. Gardelis, J. Androulakis, Z. Viskadourakis, E. L. Papadopoulou, J. Giapintzakis, S. Rai, G. S. Lodha, and S. B. Roy, Physical Review B 74, 214427 (2006).
  
  
• “ Fundamental transport processes in ensembles of silicon quantum dots”, I. Balberg, E. Savir, and J. Jedrzejewski, A. G. Nassiopoulou and S. Gardelis, Physical Review B 75, 235329 (2007) (selected for the Virtual Journal of Nanoscale Science & Technology vol. 16, issue 2 (2007)).
  
  
• “Morphology, structure, chemical composition, and light emitting properties of very thin anodic silicon films fabricated using short single pulses of current”, S. Gardelis, A. G. Nassiopoulou, F. Petraki, S. Kennou, I. Tsiaoussis, and N. Frangis, Journal of Applied Physics 103, 103536 (2008).
  
  
• “Effect of exciton migration on the light emission properties in silicon nanocrystal ensembles” S. Gardelis, A. G. Nassiopoulou, N. Vouroutzis, N. Frangis, Journal of Applied Physics 105, 113509 (2009) (selected for the Virtual Journal of Ultrafast Science vol. 8, issue 7 (2009)).
  
  
• “Lateral electronic transport in 2D arrays of oxidized Si nanocrystals on quartz: Coulomb blockade effect and role of hydrogen passivation”,  P. Manousiadis,   S. Gardelis, and A. G. Nassiopoulou, Journal of Applied Physics 109, 083718 (2011).
  
  
• “Structural and optical characterization of two-dimensional arrays of Si nanocrystals embedded in SiO2 for photovoltaic applications”, S. Gardelis, A. G. Nassiopoulou, P. Manousiadis, A. Gkanatsiou, N. Frangis, Ch. B. Lioutas, Journal of Applied Physics 111, 083536 (2012).
  
  
• “Electrical transport and photocurrent mechanisms in silicon nanocrystal multilayers”, P. Manousiadis, S. Gardelis, and A.G. Nassiopoulou, J. Appl. Phys. 113, 043703 (2013).
  
  
• “A silicon-wafer based p-n junction solar cell by aluminum-induced recrystallization and doping”, S. Gardelis, A.G. Nassiopoulou, P. Manousiadis, N. Vouroutzis, and N. Frangis, Appl. Phys. Lett. 103, 241114 (2013).