Contact Information Dr Christos Tsamis Director of Research P.O.Box 60228 153 10 Aghia Paraskevi Athens - GREECE Email: Tel: +30-2106503112 Fax: +30-2106511723

Dr. Christos Tsamis received his B.Sc. in Physics from the National University of Athens in 1989 and the Ph.D. from Aristotle University of Thessaloniki in 1996. During 1991 he worked at LETI/CEA on the modelling of Submicron SOI devices. Since 1996, he is with the Institute of Microelectronics of NCSR "Demokritos", where he is currently Senior Researcher. His current interest focuses in two areas: (a) Front-End processes for Micro- and Nano-devices and (b) Microsystems and Sensors. He is or was scientific responsible for several EU and National Projects. He is the author or co-author of over 80 publications in International Journals and Conferences and he is holder of one patent. Since March 2006, he is Head of Education at NCSR "Demokritos"

Selected Publications

• "Oxidation enhanced diffusion (OED) of boron in very low energy N+2 - implanted silicon" , D. Skarlatos, C. Tsamis, M. Perego, and M. Fanciulli , J. Appl. Phys. 97, 113534 (2005).

• "Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2 implantation" , D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, D. Tsoukalas , Journal of Applied Physics, 96 (1): 300-309 Jul 1 2004.

• "The influence of thermal treatment on the stress characteristics of suspended Porous Silicon membranes on silicon" , D. Papadimitriou, C. Tsamis and A. G. Nassiopoulou , Sensors and Actuators B: Chemical, Volume 103, Issues 1-2, Pages 356-361 (2004).

• "Nitrogen distribution during oxidation of low and medium energy nitrogen implanted - Silicon" , D. Skarlatos, M. Perego, C.Tsamis, S. Ferrari, M. Fanciulli and D. Tsoukalas , Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 216: 75-79 Feb 2004.

• "Thermal properties of suspended porous silicon micro-hotplates for sensor applications" , C. Tsamis, A. G. Nassiopoulou and A. Tserepi , Sensors and Actuators B: Chemical, Volume 95, Issues 1-3, Pages 78-82 (2003).

• "Fabrication of suspended porous silicon micro-hotplates for thermal sensor applications" , C. Tsamis, A. Tserepi and A. G. Nassiopoulou , Physica Status Solidi (a), Vol. 196, Issue 2, April 2003.

• "Fabrication of suspended thermally insulating membranes using front-side micromachining of the Si substrate: characterization of the etching process" , A. Tserepi, C. Tsamis, G. Kokkoris, E. Goggolides and A. G. Nassiopoulou , J. of Micromech. and Microeng, Vol.13, p. 323-329, March 2003.

• "Influence of implantation energy on the electrical properties of ultra-thin gate oxides grown on nitrogen implanted Si-substrates" , E. Kapetanakis, D. Skarlatos, C. Tsamis, P. Normand and D. Tsoukalas , Appl. Physics Lett., 82 (26), pp. 4764-4766 (2003).

• "Silicon self-diffusivity measurement in thermal SiO2 by Si-30/Si-28 isotopic exchange" , D. Mathiot, JP. Schunck, M. Perego M, M. Fanciulli, P. Normand, C. Tsamis and D. Tsoukalas , J. Applied Physics, 94 (3), pp. 2136-2138 (2003).

• "Oxidation of nitrogen - implanted silicon I: energy dependence of oxide growth and defect characterisation of the silicon substrate" , D. Skarlatos, C. Tsamis and D. Tsoukalas , J. Applied Physics, Vol. 93, No 4, 15 February 2003.

• "Fabrication of suspended porous silicon micro-hotplates for thermal sensor applications" , C. Tsamis, A. Tserepi and A. G. Nassiopoulou , Physica Status Solidi (a), Vol. 196, Issue 2, April 2003.

• "Dry etching of Porous Silicon in High Density Plasmas" , A. Tserepi, C. Tsamis, E. Gogolides and A. G. Nassiopoulou , Physica Status Solidi (a), Vol. 196, Issue 2, April 2003.

• "Hydrogen catalytic reaction on Pd doped Porous Silicon" , C. Tsamis, L. Tsoura, A. Travlos, A. G. Nassiopoulou, C. E. Salmas, K. S. Hatzilyberis and G. P. Androutsopoulos , IEEE Sensors Journal, Vol. 2, No. 2, p. 89 (2002).

• "Influence of Ge implantation on the mechanical properties of Polycrystalline Silicon Microstructures" , S. Polymenakos, V. Stergiou, A. Kontos, C. Tsamis, Y. Raptis and D. Tsoukalas , J. of Micromech. and Microeng., Vol. 12 , p. 1 (2002).

• "Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material" , D. Tsoukalas, C. Tsamis and P. Normand , J. Appl. Phys., Vol. 89, No. 12, p. 7809 (2001).