Plasma Group Home Page

People

Staff

Collaborating researchers

Research

Microfabrication for life sciences

Nanotextured smart surfaces

Plasma process simulation

Micro-nano lithography

Software

Metrology of LER

Metrology of surface roughness

Micro & nano topography evolution

Bulk plasma

Equipment

Services

Patents

Publications

Classes taught

Summer schools

News

Jobs & thesis openings

Links

Contact

Back to home

Publications

Please choose a year:
2007, 2006, 2005, 2004, 2003, 2002, 2001, 2000,
1999, 1998 , 1997, 1996, 1995, 1994 , 1993, 1992, 1991, 1989


2007

• Tsougeni K, Tserepi A, Boulousis G, V. Constantoudis, E. Gogolides.
Tunable poly(dimethylsiloxane) topography in O2 or Ar plasmas for controlling surface wetting properties and their ageing
(2007) JPN J Applied Physics 1 46 (2): 744-750.

• Bayiati P., Tserepi A., Petrou P.S., Kakabakos S.E., Misiakos K., Gogolides E.
Electrowetting on plasma-deposited fluorocarbon hydrophobic films for biofluid transport in microfluidics
(2007) Journal of Applied Physics, 101 (10), art. no. 103306.

• Tsougeni K., Tserepi A., Boulousis G., Constantoudis V., Gogolides E.
Control of nanotexture and wetting properties of polydimethylsiloxane from very hydrophobic to super-hydrophobic by plasma processing
(2007) Plasma Processes and Polymers, 4 (4), pp. 398-405.

• Tsougeni K., Tserepi A., Gogolides E.
Photosensitive poly(dimethylsiloxane) materials for microfluidic applications
(2007) Microelectronic Engineering, 84 (5-8), pp. 1104-1108.

• Vlachopoulou M.-E., Tserepi A., Beltsios K., Boulousis G., Gogolides E.
Nanostructuring of PDMS surfaces: Dependence on casting solvents
(2007) Microelectronic Engineering, 84 (5-8), pp. 1476-1479.

• Bayiati P., Tserepi A., Petrou P.S., Misiakos K., Kakabakos S.E., Gogolides E., Cardinaud C.
Biofluid transport on hydrophobic plasma-deposited fluorocarbon films
(2007) Microelectronic Engineering, 84 (5-8), pp. 1677-1680.

• Drygiannakis D., Patsis G.P., Raptis I., Niakoula D., Vidali V., Couladouros E., Argitis P., Gogolides E.
Stochastic simulation studies of molecular resists
(2007) Microelectronic Engineering, 84 (5-8), pp. 1062-1065.

• Vourdas N., Tserepi A., Gogolides E.
Nanotextured super-hydrophobic transparent poly(methyl methacrylate) surfaces using high-density plasma processing
(2007) Nanotechnology, 18 (12), art. no. 125304.

• Karlis A.K., Papachristou P.K., Diakonos F.K., Constantoudis V., Schmelcher P.
Fermi acceleration in the randomized driven Lorentz gas and the Fermi-Ulam model
(2007) Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, 76 (1), art. no. 016214.

• Vamvakas V.Em., Vourdas N., Gardelis S.
Optical characterization of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition
(2007) Microelectronics Reliability, 47 (4-5 SPEC. ISS.), pp. 794-797.


2006

• Eon D., Raballand V., Cartry G., Cardinaud C., Vourdas N., Argitis P., Gogolides E.
Plasma oxidation of polyhedral oligomeric silsesquioxane polymers
(2006) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 24 (6), pp. 2678-2688.

• Vourdas N., Karadimos G., Goustouridis D., Gogolides E., Boudouvis A.G., Tortai J.-H., Beltsios K., Raptis I.
Multiwavelength interferometry and competing optical methods for the thermal probing of thin polymeric films
(2006) Journal of Applied Polymer Science, 102 (5), pp. 4764-4774.

• Patsis G.P., Nijkerk M.D., Leunissen L.H.A, Gogolides E.
Simultation of material and processing effects on photoresist line-edge roughness
(2006) International Journal of Computational Science and Engineering, 2 (3-4), pp. 134-143.

• Patsis G.P., Constantoudis V., Gogolides E.
Effects of lithography non-uniformity on device electrical behavior: Simple stochastic modeling of material and process effects on device performance
(2006) Journal of Computational Electronics, 5 (4), pp. 341-344.

• Kokkoris G., Boudouvis A.G., Gogolides E.
Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching
(2006) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 24 (6), art. no. 006606JVA, pp. 2008-2020.

• Douvas A., Van Roey F., Goethals M., Papadokostaki K.G., Yannakopoulou K., Niakoula D., Gogolides E., Argitis P.
Partially fluorinated, polyhedral oligomeric silsesquioxane-functionalized (meth)acrylate resists for 193 nm bilayer lithography
(2006) Chemistry of Materials, 18 (17), pp. 4040-4048.

• Tserepi A.D., Vlachopoulou M.-E., Gogolides E.
Nanotexturing of poly(dimethylsiloxane) in plasmas for creating robust superhydrophobic surfaces
(2006) Nanotechnology, 17 (15), art. no. 062, pp. 3977-3983.

• Gogolides E., Constantoudis V., Patsis G.P., Tserepi A.
A review of line edge roughness and surface nanotexture resulting from patterning processes
(2006) Microelectronic Engineering, 83 (4-9 SPEC. ISS.), pp. 1067-1072.

• Misiakos K., Petrou P.S., Kakabakos S.E., Vlahopoulou M.E., Tserepi A., Gogolides E., Ruf H.H.
Monolithic silicon optoelectronic transducers and elastomeric fluidic modules for bio-spotting and bio-assay experiments
(2006) Microelectronic Engineering, 83 (4-9 SPEC. ISS.), pp. 1605-1608.

• Marceau S., Tortai J.-H., Tillier J., Vourdas N., Gogolides E., Raptis I., Beltsios K., van Werden K.
Thickness-dependent glass transition temperature of thin resist films for high resolution lithography
(2006) Microelectronic Engineering, 83 (4-9 SPEC. ISS.), pp. 1073-1077.

• Patsis G.P., Gogolides E.
Effects of model polymer chain architectures and molecular weight of conventional and chemically amplified photoresists on line-edge roughness. Stochastic simulations
(2006) Microelectronic Engineering, 83 (4-9 SPEC. ISS.), pp. 1078-1081.

• Triantafyllopoulou R., Chatzandroulis S., Tsamis C., Tserepi A.
Alternative micro-hotplate design for low power sensor arrays
(2006) Microelectronic Engineering, 83 (4-9 SPEC. ISS.), pp. 1189-1191.

• Patsis G.P., Tsikrikas N., Raptis I., Glezos N.
Electron-beam lithography simulation for the fabrication of EUV masks
(2006) Microelectronic Engineering, 83 (4-9 SPEC. ISS.), pp. 1148-1151.

• Karlis A.K., Papachristou P.K., Diakonos F.K., Constantoudis V., Schmelcher P.
Hyperacceleration in a stochastic Fermi-Ulam model
(2006) Physical Review Letters, 97 (19), art. no. 194102.

• Papachristou P.K., Mavrommatis E., Constantoudis V., Diakonos F.K., Wambach J.
Lyapunov instability versus relaxation time in two coupled oscillators
(2006) Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, 73 (1).

• Papadimitropoulos G., Vourdas N., Vamvakas V.Em., Davazoglou D.
Optical and structural properties of copper oxide thin films grown by oxidation of metal layers
(2006) Thin Solid Films, 515 (4), pp. 2428-2432.

• Constantoudis V., Gogolides E., Patsis G.P., Wagner M., DeYoung J., Harbinson C.
Line-width roughness analysis of EUV resists after development in homogenous CO2 solutions using CO2 compatible salts (CCS) by a three-parameter model
(2006) Proceedings of SPIE - The International Society for Optical Engineering, 6153 II, art. no. 61533W.

• Patsis G.P., Constantoudis V., Gogolides E.
Integrated simulation of Line-Edge Roughness (LER) effects on Sub-65 nm transistor operation: From lithography simulation, to LER metrology, to device operation
(2006) Proceedings of SPIE - The International Society for Optical Engineering, 6151 II, art. no. 61513J.

• Misiakos K., Petrou P., Kakabakos S.E., Vlachopoulou M., Tserepi A., Gogolides E.
Monolithic silicon optoelectronic devices for protein and DNA detection
(2006) Proceedings of SPIE - The International Society for Optical Engineering, 6125, art. no. 61250W.


2005

• Tserepi A., Gogolides E., Tsougeni K., Constantoudis V., Valamontes E.S.
Tailoring the surface topography and wetting properties of oxygen-plasma treated polydimethylsiloxane
(2005) Journal of Applied Physics, 98 (11), art. no. 113502, pp. 1-6.

• Patsis G.P., Gogolides E.
Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator
(2005) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23 (4), pp. 1371-1375.

• Sarris V., Patsis G.P., Constantoudis V., Boudouvis A.G., Gogolides E.
A stochastic photoresist-polymer dissolution model combining the percolation and critical ionization models
(2005) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44 (10), pp. 7400-7403.

• Patsis G.P., Gogolides E., Van Werden K.
Effects of photoresist polymer molecular weight and acid-diffusion on line-edge roughness
(2005) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44 (8), pp. 6341-6348.

• Vourdas N., Boudouvis A.G., Gogolides E.
Increased plasma etch resistance of thin polymeric and photoresist films
(2005) Microelectronic Engineering, 78-79 (1-4), pp. 474-478.

• Constantoudis V., Gogolides E., Patsis G.P., Sarris V., Tserepi A., Diakoumakos C., Valamontes E.S.
Fractal roughness of polymers after lithographic processing
(2005) Japanese Journal of Applied Physics, Part 2: Letters, 44 (1-7), pp. L186-L189.

• Vlachopoulou M.E., Tserepi A., Vourdas N., Gogolides E., Misiakos K.
Patterning of thick polymeric substrates for the fabrication of microfluidic devices
(2005) Journal of Physics: Conference Series, 10 (1), pp. 293-296.

• Patsis G.P., Gogolides E.
Effects of model polymer chain architectures of photo-resists on line-edgeroughness:
Monte Carlo simulations
(2005) Journal of Physics: Conference Series, 10 (1), pp. 389-392.

• Vourdas N., Boudouvis A.G., Gogolides E.
Plasma etch rate measurements of thin PMMA films and correlation with the glass transition temperature
(2005) Journal of Physics: Conference Series, 10 (1), pp. 405-408.

• Patsis G.P.
Monte Carlo study of surface and line-width roughness of resist film surfaces during dissolution
(2005) Mathematics and Computers in Simulation, 68 (2), pp. 145-156.

• Patsis G.P.
Stochastic simulation of thin photoresist film dissolution: A dynamic and a quasistatic dissolution algorithm for the simulation of surface and line-edge roughness formation
(2005) Polymer, 46 (7), pp. 2404-2417.

• Leunissen L.H.A., Ercken M., Patsis G.P.
Determining the impact of statistical fluctuations on resist line edge roughness
(2005) Microelectronic Engineering, 78-79 (1-4), pp. 2-10.

• Patsis G.P., Glezos N.
Electron-beam lithography simulation for EUV mask applications
(2005) Journal of Physics: Conference Series, 10 (1), pp. 385-388.

• Constantoudis V., Nicolaides C.A.
Stabilization and relative phase effects in a dichromatically driven diatomic Morse molecule: Interpretation based on nonlinear classical dynamics
(2005) Journal of Chemical Physics, 122 (8), pp. 1-8.

• Favre C., Vourdas N., Pimienta E., Vamvakas V.Em., Davazoglou D.
Chemically vapor deposited SnO2 films by oxidation of SnCl 4 vapors. Films characterization and application in gas sensors
(2005) Proceedings - Electrochemical Society, PV 2005-09, pp. 952-959.

• Papadimitropoulos G., Vourdas N., Vamvakas V.Em., Davazoglou D.
Deposition and characterization of copper oxide thin films
(2005) Journal of Physics: Conference Series, 10 (1), pp. 182-185.

• Constantoudis V., Gogolides E., Roberts J., Stowers J.K.
Characterization and modeling of Line Width Roughness (LWR)
(2005) Progress in Biomedical Optics and Imaging - Proceedings of SPIE, 5752 (III), pp. 1227-1236.


2004

• Patsis G.P., Constantoudis V., Gogolides E.
Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with monte carlo simulations
(2004) Microelectronic Engineering, 75 (3), pp. 297-308.

• Eon D., Cartry G., Fernandez V., Cardinaud C., Tegou E., Bellas V., Argitis P., Gogolides E.
Surface segregation of photoresist copolymers containing polyhedral oligomeric silsesquioxanes studied by x-ray photoelectron spectroscopy
(2004) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22 (5), pp. 2526-2532.

• Kokkoris G., Tserepi A., Boudouvis A.G., Gogolides E.
Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution
(2004) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22 (4), pp. 1896-1902.

• Bayiati P., Tserepi A., Gogolides E., Misiakos K.
Selective plasma-induced deposition of fluorocarbon films on metal surfaces for actuation in microfluidics
(2004) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 22 (4), pp. 1546-1551.

• Constantoudis V., Patsis G.P., Leunissen L.H.A., Gogolides E.
Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions
(2004) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22 (4), pp. 1974-1981.

• Constantoudis V., Patsis G.P., Gogolides E.
Photoresist line-edge roughness analysis using scaling concepts
(2004) Journal of Microlithography, Microfabrication and Microsystems, 3 (3), pp. 429-435.

• Tegou E., Bellas V., Gogolides E., Argitis P., Eon D., Cartry G., Cardinaud C.
Polyhedral oligomeric silsesquioxane (POSS) based resists: Material design challenges and lithographic evaluation at 157 nm
(2004) Chemistry of Materials, 16 (13), pp. 2567-2577.

• Gogolides E., Boukouras C., Kokkoris G., Brani O., Tserepi A., Constantoudis V.
Si etching in high-density SF6 plasmas for microfabrication: Surface roughness formation
(2004) Microelectronic Engineering, 73-74, pp. 312-318.

• Tegou E., Bellas V., Gogolides E., Argitis P.
Polyhedral oligomeric silsesquioxane (POSS) acrylate copolymers for microfabrication: Properties and formulation of resist materials
(2004) Microelectronic Engineering, 73-74, pp. 238-243.

• Eder-Kapl S., Loeschner H., Zeininger M., Fallmann W., Kirch O., Patsis G.P., Constantoudis V., Gogolides E.
Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography
(2004) Microelectronic Engineering, 73-74, pp. 252-258.

• Ioannou-Sougleridis V., Constantoudis V., Alexe M., Scholz R., Vellianitis G., Dimoulas A.
Effects on surface morphology of epitaxial Y2O3 layers on Si (001) after postgrowth annealing
(2004) Thin Solid Films, 468 (1-2), pp. 303-309.

• Papachristou P.K., Diakonos F.K., Constantoudis V., Schmelcher P., Benet L.
Scattering off two oscillating disks: Dilute chaos
(2004) Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, 70 (5 2), art. no. 056215, pp. 056215-1-056215-18.

• N. Vourdas, V. Bellas, E. Tegou, O. Brani, V. Constantoudis, P. Argitis, A. Tserepi, E. Gogolides
Oxygen plasma modification of polyhedral oligomeric silsesquioxane (POSS) containing copolymers for micro and nano fabrication
(2004) Plasma Processing Of Polymers, pp. 281 – 292.

• Ercken M., Leunissen L.H.A., Pollentier I., Patsis G.P., Constantoudis V., Gogolides E.
Effects of different processing conditions on line edge roughness for 193nm and 157nm resists
(2004) Proceedings of SPIE - The International Society for Optical Engineering, 5375 (PART 1), pp. 266-275.

• Patsis G.P., Constantoudis V., Gogolides E.
Material origins of line-edge roughness: Monte-Carlo simulations and scaling analysis
(2004) Proceedings of SPIE - The International Society for Optical Engineering, 5376 (PART 2), pp. 773-781.

• Constantoudis V., Patsis G.P., Leunissen L.H.A., Gogolides E.
Towards a complete description of line width roughness: A comparison of different methods for vertical and spatial LER and LWR analysis and CD variation
(2004) Proceedings of SPIE - The International Society for Optical Engineering, 5375 (PART 2), pp. 967-977.


2003

• Sarantopoulou E., Kollia Z., Kočevar K., Muševič I., Kobe S., Dražić G., Gogolides E., Argitis P., Cefalas A.C.
The challenges of 157 nm nanolithography: Surface morphology of silicon-based copolymers
(2003) Materials Science and Engineering C, 23 (6-8), pp. 995-999.

• Tsamis C., Nassiopoulou A.G., Tserepi A.
Thermal properties of suspended porous silicon micro-hotplates for sensor applications
(2003) Sensors and Actuators, B: Chemical, 95 (1-3), pp. 78-82.

• Patsis G.P., Constantoudis V., Tserepi A., Gogolides E., Grozev G., Hoffmann T.
Roughness analysis of lithographically produced nanostructures: Off-line measurement and scaling analysis
(2003) Microelectronic Engineering, 67-68, pp. 319-325.

• Raptis I., Niakoula D., Tegou E., Bellas V., Gogolides E., Argitis P., Papadokostaki K.G., Ioannidis A.
Resist process issues related to the glass transition changes in chemically amplified resist films
(2003) Microelectronic Engineering, 67-68, pp. 283-291.

• Patsis G.P., Constantoudis V., Tserepi A., Gogolides E.
Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of top-down scanning electron microscopy images
(2003) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21 (3), pp. 1008-1018.

• Tserepi A., Tsamis C., Gogolides E., Nassiopoulou A.G.
Dry etching of porous silicon in high density plasmas
(2003) Physica Status Solidi (A) Applied Research, 197 (1), pp. 163-167.

• Constantoudis V., Patsis G.P., Tserepi A., Gogolides E.
Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors
(2003) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21 (3), pp. 1019-1026.

• Tsamis C., Tserepi A., Nassiopoulou A.G.
Fabrication of suspended porous silicon micro-hotplates for thermal sensor applications
(2003) Physica Status Solidi (A) Applied Research, 197 (2), pp. 539-543.

• Tserepi A., Tsamis C., Kokkoris G., Gogolides E., Nassiopoulou A.G.
Fabrication of suspended thermally insulating membranes using frontside micromachining of the Si substrate: Characterization of the etching process
(2003) Journal of Micromechanics and Microengineering, 13 (2), pp. 323-329.

• Tserepi A., Gogolides E., Constantoudis V., Cordoyiannis G., Raptis I., Valamontes E.S.
Surface roughness induced by plasma etching of Si-containing polymers
(2003) Journal of Adhesion Science and Technology, 17 (8), pp. 1083-1091.

• Tserepi A., Cordoyiannis G., Patsis G.P., Constantoudis V., Gogolides E., Valamontes E.S., Eon D., Peignon M.C., Cartry G., Cardinaud Ch., Turban G.
Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane
(2003) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21 (1 SPEC.), pp. 174-182.

• Gogolides E., Argitis P., Couladouros E.A., Vidali V.P., Vasilopoulou M., Cordoyiannis G., Diakoumakos C.D., Tserepi A.
Photoresist etch resistance enhancement using novel polycarbocyclic derivatives as additives
(2003) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21 (1 SPEC.), pp. 141-147.

• Patsis G.P., Glezos N., Gogolides E.
Monte Carlo simulation of gel formation and surface and line-edge roughness in negative tone chemically amplified resists
(2003) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21 (1 SPEC.), pp. 254-266.

• Tegou E., Bellas V., Gogolides E., Argitis P., Dean K., Eon D., Cartry G., Cardinaud C.
Polyhedral oligomeric silsesquioxane (POSS) based resist materials for 157 nm lithography
(2003) Proceedings of SPIE - The International Society for Optical Engineering, 5039 I, pp. 453-461.

• Constantoudis V., Patsis G.P., Gogolides E.
Photo-resist line-edge roughness analysis using scaling concepts
(2003) Proceedings of SPIE - The International Society for Optical Engineering, 5038 II, pp. 901-909.


2002

• Bellas V., Tegou E., Raptis I., Gogolides E., Argitis P., Iatrou H., Hadjichristidis N., Sarantopoulou E., Cefalas A.C.
Evaluation of siloxane and polyhedral silsesquioxane copolymers for 157 nm lithography
(2002) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20 (6), pp. 2902-2908.

• Eon D., De Poucques L., Peignon M.C., Cardinaud Ch., Turban G., Tserepi A., Cordoyiannis G., Valamontes E.S., Raptis I., Gogolides E.
Surface modification of Si-containing polymers during etching for bilayer lithography
(2002) Microelectronic Engineering, 61-62, pp. 901-906.

• Constantoudis V., Gogolides E., Tserepi A., Diakoumakos C.D., Valamontes E.S.
Roughness characterization in positive and negative resists
(2002) Microelectronic Engineering, 61-62, pp. 793-801.

• Chatzandroulis S., Tserepi A., Goustouridis D., Normand P., Tsoukalas D.
Fabrication of single crystal Si cantilevers using a dry release process and application in a capacitive-type humidity sensor
(2002) Microelectronic Engineering, 61-62, pp. 955-961.

• Normand P., Beltsios K., Tserepi A., Aidinis K., Tsoukalas D., Cardinaud C.
A new masking method for protecting silicon surfaces during anisotropic silicon wet etching
(2002) Microelectronic Engineering, 61-62, pp. 895-900.

• Cefalas A.C., Sarantopoulou E., Argitis P., Gogolides E.
He2 60-90 nm photon source for investigating photodissociation dynamics of potential X-UV resists
(2002) Microelectronic Engineering, 61-62, pp. 157-163.

• Kokkoris G., Gogolides E., Boudouvis A.G.
Etching of SiO2 features in fluorocarbon plasmas: Explanation and prediction of gas-phase-composition effects on aspect ratio dependent phenomena in trenches
(2002) Journal of Applied Physics, 91 (5), pp. 2697-2707.

• Patsis G.P., Glezos N.
Probabilistic gel formation theory in negative tone chemically amplified resists used in optical and electron beam lithography
(2002) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20 (4), pp. 1303-1310.

• Papachristou P.K., Diakonos F.K., Constantoudis V., Schmelcher P., Benet L.
Classical scattering from oscillating targets
(2002) Physics Letters, Section A: General, Atomic and Solid State Physics, 306 (2-3), pp. 116-126.

• Eon D., Cartry G., Peignon M.C., Cardinaud Ch., Tserepi A., Cordoyiannis G., Valamontes E.S., Raptis I., Gogolides E.
Resist plasma etching for 157 nm lithography
(2002) IEEE International Conference on Plasma Science, p. 217.

• Glezos N., Argitis P., Velessiotis D., Koutsolelos P., Diakoumakos C.D., Tserepi A., Beltsios K.
Polyoxometallate containing polymeric materials for nanolithography and molecular devices
(2002) Materials Research Society Symposium - Proceedings, 705, pp. 49-59.

• Tserepi A., Tsamis C., Gogolides E., Nassiopoulou A.G.
Fabrication of suspended membranes for thermal sensors using high-density plasma etching
(2002) Proceedings of SPIE - The International Society for Optical Engineering, 4755, pp. 776-783.


2001

• Diakoumakos C.D., Raptis I., Tserepi A., Argitis P.
Free-radical synthesis of narrow polydispersed 2-hydroxyethyl methacrylate-based tetrapolymers for dilute aqueous base developable negative photoresists
(2001) Polymer, 43 (4), pp. 1103-1113.

• Constantoudis V., Gogolides E., Patsis G.P., Tserepi A., Valamontes E.S.
Characterization and simulation of surface and line-edge roughness in photoresists
(2001) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19 (6), pp. 2694-2698.

• Normand P., Beltsios K., Tserepi A., Aidinis K., Tsoukalas D., Cardinaud C.
A masking approach for anisotropic silicon wet etching
(2001) Electrochemical and Solid-State Letters, 4 (10), pp. G73-G76.

• Sarantopoulou E., Cefalas A.C., Argitis P., Gogolides E.
Photoresist material for 157-nm photolithography
(2001) Materials Science and Engineering C, 15 (1-2), pp. 159-161.

• Tserepi A., Valamontes E.S., Tegou E., Raptis I., Gogolides E.
Surface and line-edge roughness in plasma-developed resists
(2001) Microelectronic Engineering, 57-58, pp. 547-554.

• Normand P., Kapetanakis E., Tsoukalas D., Tserepi A., Tsoi E., Beltsios K., Aidinis K., Zhang S., Van den Berg J.
Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques
(2001) Microelectronic Engineering, 57-58, pp. 1003-1007.

• Diakoumakos C.D., Raptis I., Tserepi A., Argitis P.
Negative (meth)acrylate resist materials based on novel crosslinking chemistry
(2001) Microelectronic Engineering, 57-58, pp. 539-545.

• Patsis G.P., Gogolides E.
Simulation of surface and line-edge roughness formation in resists
(2001) Microelectronic Engineering, 57-58, pp. 563-569.

• Kokkoris G., Gogolides E., Boudouvis A.G.
Simulation of fluorocarbon plasma etching of SiO2 structures
(2001) Microelectronic Engineering, 57-58, pp. 599-605.

• Constantoudis V., Nicolaides C.A.
Nonhyperbolic escape and changes in phase-space stability structures in laserinduced multiphoton dissociation of a diatomic molecule
(2001) Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, 64 (5 II), pp. 056211/1-056211/6.

• Papachristou P.K., Diakonos F.K., Mavrommatis E., Constantoudis V.
Nonperiodic delay mechanism and fractallike behavior in classical time-dependent scattering
(2001) Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, 64 (1 II), pp. 016205/1-016205/7.


2000

• Bazu M., Udrea-Spenea M., Tsoi E., Turtudau F., Ilian V., Papaioannou G., Galateanu L., Stan A., Tserepi A., Bucur M.
Building-in reliability technology for diodes manufacturing
(2000) Proceedings of the International Semiconductor Conference, CAS, 1, pp. 333-336.

• Gogolides E., Vauvert P., Kokkoris G., Turban G., Boudouvis A.G.
Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition
(2000) Journal of Applied Physics, 88 (10), pp. 5570-5584.

• Patsis G.P., Tserepi A., Raptis I., Glezos N., Gogolides E., Valamontes E.S.
Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and simulation
(2000) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 18 (6), pp. 3292-3296.

• Cefalas A.C., Sarantopoulou E., Gogolides E., Argitis P.
Absorbance and outgasing of photoresist polymeric materials for UV lithography below 193 nm including 157 nm lithography
(2000) Microelectronic Engineering, 53 (1), pp. 123-126.

• Kokkoris G., Gogolides E., Boudouvis A.G.
SiO2 and Si etching in fluorocarbon plasmas: coupling of a surface model with a profile evolution simulator
(2000) Microelectronic Engineering, 53 (1), pp. 395-398.

• Sarantopoulou E., Cefalas A.C., Gogolides E., Argitis P.
Photoresist polymeric materials for 157 nm photolithography
(2000) Conference on Lasers and Electro-Optics Europe - Technical Digest, p. 158.

• Tegou E., Gogolides E., Argitis P., Raptis I., Patsis G. P., Glezos N., Tan Zoilo C.H., Lee, Kim, Le, Phuong, Hsu, Yautzong, Hatzakis M.
Epoxidized novolac resist (EPR) for high resolution negative and positive tone electron beam lithography
(2000) Proceedings of SPIE - The International Society for Optical Engineering, 3999, p. II/.


1999

• Cefalas A.C., Sarantopoulou E., Argitis P., Gogolides E.
Mass spectroscopic and degassing characteristics of polymeric materials for 157 nm photolithography
(1999) Applied Physics A: Materials Science and Processing, 69 (7), pp. S929-S933.

• Gogolides E., Vauvert P., Courtin Y., Kokkoris G., Pelle R., Boudouvis A., Turban G.
SiO2 and Si etching in fluorocarbon plasmas: A detailed surface model coupled with a complete plasma and profile simulator
(1999) Microelectronic Engineering, 46 (1), pp. 311-314.

• Patsis G.P., Glezos N., Raptis I., Valamontes E.S.
Simulation of roughness in chemically amplified resists using percolation theory
(1999) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 17 (6), pp. 3367-3370.

• Rosenbusch A., Cui Z., DiFabrizio E., Gentili M., Glezos N., Meneghini G., Nowotny B., Patsis G., Prewett P., Raptis I.
Simulation of chemically amplified resist processes for 150 nm e-beam lithography
(1999) Microelectronic Engineering, 46 (1), pp. 379-382.

• Patsis G.P., Glezos N.
Molecular dynamics simulation of gel formation and acid diffusion in negative tone chemically amplified resists
(1999) Microelectronic Engineering, 46 (1), pp. 359-363.


1998

• Tserepi A., Gogolides E., Cardinaud C., Rolland L., Turban G.
Highly anisotropic silicon and polysilicon room-temperature etching using fluorine-based high density plasmas
(1998) Microelectronic Engineering, 41-42, pp. 411-414.

• Tegou E., Gogolides E., Argitis P., Boudouvis A., Hatzakis M.
Silylation of epoxy functionalised photoresists for optical, E - beam lithography and micromachining applications
(1998) Microelectronic Engineering, 41-42, pp. 335-338.

• Normand P., Tsoukalas D., Aidinis C., Tserepi A., Kouvatsos D., Kapetanakis E.
Fabrication of Si nano-wires using anisotropic dry and wet etching
(1998) Microelectronic Engineering, 41-42, pp. 551-554.

• Tegou E., Gogolides E., Argitis P., Raptis L., Meneghini G., Cui Z.
Silylation and dry development of chemically amplified resists SAL601, AZPN114, and epoxidised resist (EPR1) for high resolution electron-beam lithography
(1998) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37 (12 B), pp. 6873-6876.

• Argitis P., Vasilopoulou M.A., Gogolides E., Tegou E., Hatzakis M., Kollia Z., Cefalas A.C.
Etch resistance enhancement and absorbance optimization with polyaromatic compounds for the design of 193 nm photoresists
(1998) Microelectronic Engineering, 41-42, pp. 355-358.

• Gogolides E., Vauvert P., Rhallabi A., Turban G.
Complete plasma physics, plasma chemistry, and surface chemistry simulation of SiO2 and Si etching in CF4 plasmas
(1998) Microelectronic Engineering, 41-42, pp. 391-394.

• Gicquel A., Chenevier M., Hassouni Kh., Tserepi A., Dubus M.
Validation of actinometry for estimating relative hydrogen atom densities and electron energy evolution in plasma assisted diamond deposition reactors
(1998) Journal of Applied Physics, 83 (12), pp. 7504-7521.

• M. Hatzakis, E. Gogolides (editors)
Proceedings of the International Conference on Micro and Nanofabrication
(1998) Published by Elsevier, September 15-18, 1997, Athens, Greece.

• Raptis I., Glezos N., Rosenbusch A., Patsis G., Argitis P.
Calculation of energy deposition in thin resist films over multilayer substrates
(1998) Microelectronic Engineering, 41-42, pp. 171-174.

• Glezos N., Patsis G.P., Rosenbusch A., Cui Z.
E-beam proximity correction for negative tone chemically amplified resists taking into account post-bake effects
(1998) Microelectronic Engineering, 41-42, pp. 319-322.

• Raptis I., Meneghini G., Rosenbusch A., Glezos N., Palumbo R., Ardito M., Scopa L., Patsis G., Valamontes E., Argitis P.
Electron beam lithography on multilayer substrates: Experimental and theoretical study
(1998) Proceedings of SPIE - The International Society for Optical Engineering, 3331, pp. 431-441.


1997

• Tserepi A., Schwarzenbach W., Derouard J., Sadeghi N.
Kinetics of F atoms and fluorocarbon radicals studied by threshold ionization mass spectrometry in a microwave CF4 plasma
(1997) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 15 (6), pp. 3120-3126.

• Schwarzenbach W., Tserepi A., Derouard J., Sadeghi N.
Mass spectrometric detection of F atoms and CFx, radicals in CF4 plasmas
(1997) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 36 (7 SUPPL. B), pp. 4644-4647.

• Grigoropoulos S., Gogolides E., Tserepi A.D., Nassiopoulos A.G.
Highly anisotropic silicon reactive ion etching for nanofabrication using mixtures of SF6/CHF3 gases
(1997) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 15 (3), pp. 640-645.

• Gogolides E., Vauvert P., Turban G.
A complete plasma physics, plasma chemistry, and surface chemistry simulator used for deposition and etching of thin films
(1997) Vide: Science, Technique et Applications, 53 (284 SUPPL. 1), pp. 166-171.

• Gogolides E.
A synthetic approach to RF plasma modeling verified by experiments:
Demonstration of a predictive and complete plasma simulator
(1997) Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 36 (4 SUPPL. B), pp. 2435-2442.

• Tserepi A.D., Derouard J., Booth J.P., Sadeghi N.
CF2 kinetics and related mechanisms in the presence of polymers in fluorocarbon plasmas
(1997) Journal of Applied Physics, 81 (5), pp. 2124-2130.

• Tserepi A.D., Wurzberg E., Miller T.A.
Two-photon-excited stimulated emission from atomic oxygen in rf plasmas:
Detection and estimation of its threshold
(1997) Chemical Physics Letters, 265 (3-5), pp. 297-302.

• Tegou E., Gogolides E., Hatzakis M.
Thermal analysis of photoresists in aid of lithographic process development
(1997) Microelectronic Engineering, 35 (1-4), pp. 141-144.

• Patsis G.P., Meneghini G., Glezos N., Argitis P.
Theoretical discussion of diffusion effects in negative chemically amplified resists based on contrast curve simulation
(1997) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 15 (6), pp. 2561-2564.

• Patsis G., Raptis I., Glezos N., Argitis P., Hatzakis M., Aidinis C.J., Gentili M., Maggiora R.
Gel formation theory approach for the modelling of negative chemically amplified e-beam resists
(1997) Microelectronic Engineering, 35 (1-4), pp. 157-160.

• Constantoudis V., Nicolaides C.A.
Regular and chaotic multiphoton dissociation
(1997) Physical Review A - Atomic, Molecular, and Optical Physics, 55 (2), pp. 1325-1330.

• Constantoudis V., Theodorakopoulos N.
Lyapunov exponent, stretching numbers, and islands of stability of the kicked top
(1997) Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, 56 (5 SUPPL. A), pp. 5189-5194.


1996

• Metsi E., Gogolides E., Boudouvis A.
Instabilities and multiple steady states of radio-frequency discharges in CF4
(1996) Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, 54 (1), pp. 782-790.

• Gogolides E., Tzevelekis D., Grigoropoulos S., Tegou E., Hatzakis M.
Wet silylation and oxygen plasma development of photoresists: A mature and versatile lithographic process for microelectronics and microfabrication
(1996) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14 (5), pp. 3332-3338.

• Mantzaris N.V., Gogolides E., Boudouvis A.G.
A comparative study of CH4 and CF4 rf discharges using a consistent plasma physics and chemistry simulator
(1996) Plasma Chemistry and Plasma Processing, 16 (3), pp. 301-327.

• Rhallabi A., Gogolides E., Turban G.
Modelling of plasma surface interactions
(1996) Vide: Science, Technique et Applications, 52 (280), pp. 185-203.

• Mantzaris N.V., Gogolides E., Boudouvis A.G., Rhallabi A., Turban G.
Surface and plasma simulation of deposition processes: CH4 plasmas for the growth of diamondlike carbon
(1996) Journal of Applied Physics, 79 (7), pp. 3718-3729.

• Grün M., Sadeghi N., Cibert J., Genuist Y., Tserepi A.
Doping efficiency and plasma analysis of a nitrogen electron cyclotron resonance plasma
(1996) Journal of Crystal Growth, 159 (1-4), pp. 284-288.

• Gogolides E., Tegou E., Beltsios K., Papadokostaki K., Hatzakis M.
Thermal and mechanical analysis of photoresist and silylated photoresist films:
Application to AZ 5214™
(1996) Microelectronic Engineering, 30 (1-4), pp. 267-270.

• Glezos N., Patsis G.P., Raptis I., Argitis P., Gentili M., Grella L.
Application of a reaction-diffusion model for negative chemically amplified resists to determine electron-beam proximity correction parameters
(1996) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14 (6), pp. 4252-4256.

• Constantoudis V., Theodorakopoulos N.
Nonlinear dynamics of classical Heisenberg chains
(1996) Physical Review E - Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics, 55 (6 SUPPL. B), pp. 7612-7618.


1995

• Gogolides E., Grigoropoulos S., Nassiopoulos A.G.
Highly anisotropic room-temperature sub-half-micron Si reactive ion etching using fluorine only containing gases
(1995) Microelectronic Engineering, 27 (1-4), pp. 449-452.

• Nassiopoulos, A.G.; Grigoropoulos, S.; Papadimitriou, D.; Gogolides, E.
Light emission from silicon nanostructures produced by conventional lithographic and reactive ion etching techniques,
(1995) Physica Status Solidi B, vol.190, (no.1):91-5.

• Mantzaris N.V., Boudouvis A., Gogolides E.,
Radio-frequency plasmas in CF4: self-consistent modeling of the plasma physics and chemistry,
(1995) Journal of Applied Physics, vol.77, (no.12):6169-80.

• Nassiopoulos A.G., Grigoropoulos S., Gogolides E., Papadimitriou D.
Visible luminescence from one- and two-dimensional silicon structures produced by conventional lithographic and reactive ion etching techniques,
(1995) Applied Physics Letters, vol.66, (no.9):1114-16.

• Gogolides E., Tzevelekis D., Yannakopoulou K., Hatzakis M.
New method which increases the Si content in wet silylation, and its relation to the thermal effects during O2 plasma development
(1995) Microelectronic Engineering, 27 (1-4), pp. 381-384.

• Nassiopoulos A.G., Grigoropoulos S., Canham L., Halimaoui A., Berbezier I., Gogolides E., Papadimitriou D.
Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates
(1995) Thin Solid Films, 255 (1-2), pp. 329-333.

• Gogolides E., Mary, David, Rhallabi, Ahmed, Turban, Guy
RF plasmas in methane: Prediction of plasma properties and neutral radical densities with combined gas-phase physics and chemistry model
(1995) Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 34 (1), pp. 261-270.


1994

• Gogolides E., Stathakopoulos, M., Boudouvis A.
Modelling of radio frequency plasmas in tetrafluoromethane (CF4): The gas phase physics and the role of negative ion detachment
(1994) Journal of Physics D: Applied Physics, 27 (9), pp. 1878-1886.

• Tserepi A. D., Miller T. A.
Two-photon absorption laser-induced fluorescence of H atoms: a probe for heterogeneous processes in hydrogen plasmas
(1994) Journal of Applied Physics, 75 (11), pp. 7231-7236.

• Gogolides E., Yannakopoulou K., Traverse A., Nassiopoulos A.G., Tsois E., Hatzakis M.
Characterization of a positive-tone wet silylation process with the AZ 5214TM photoresist
(1994) Microelectronic Engineering, 25 (1), pp. 75-90.

• Gogolides E., Buteau C., Rhallabi A., Turban G.
Radio-frequency glow discharges in methane gas: modelling of the gas-phase physics and chemistry
(1994) Journal of Physics D: Applied Physics, 27 (4), pp. 818-825.

• Gogolides E., Baik K.H., Yannakopoulou K., Van den hove L., Hatzakis M.
Lithographic evaluation of a new wet silylation process using safe solvents and the commercial photoresists AZ 5214ETM
(1994) Microelectronic Engineering, 23 (1-4), pp. 267-270.

• Gogolides E., Tzevelekis D., Tsoi E., Hatzakis M., and others.
Quarter-micron lithography with a wet-silylated and dry-developed commercial photoresist,
(1994) Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), vol.12, (no.6):3914-18.


1993

• Gogolides E., Yannakopoulou K., Nassiopoulos A.G., Tsois E., Hatzakis M.
Characterization of a positive-tone wet silylation process with the AZ 5214TM photoresist
(1993) Microelectronic Engineering, 21 (1-4), pp. 263-266.


1992

• Gogolides E., Sawin H.H., Brown R.A.
Direct calculation of time-periodic states of continuum models of radio-frequency plasmas
(1992) Chemical Engineering Science, 47 (15-16), pp. 3839-3855.

• Gogolides E., Sawin H.H
Continuum modeling of radio-frequency glow discharges. I. Theory and results for electropositive and electronegative gases,
(1992) Journal of Applied Physics, vol.72, (no.9):3971-87.

• Gogolides E., Sawin H.H.
Continuum modeling of radio-frequency glow discharges. II. Parametric studies and sensitivity analysis,
(1992) Journal of Applied Physics, vol.72, (no.9):3988-4002.

• Gogolides E., Tsoi E., Nassiopoulos A.G., Hatzakis M
Wet silylation and dry development with the AZ 5214 photoresist,
(1992) Journal of Vacuum Science & Technology B (Microelectronics Processing and Phenomena), vol.10, (no.6):2610-14.

• Dunlop J.R., Tserepi A.D., Preppernau B.L., Cerny T.M., Miller T.A.
H atom plasma diagnostics: A sensitive probe of temperature and purity
(1992) Plasma Chemistry and Plasma Processing, 12 (1), pp. 89-101.


1991

• Sawin Herbert H., Gogolides Evangelos.
Continuum modeling of plasma processes
(1991) Proceedings - The Electrochemical Society, 91 (4), pp. 603-613.


1989

• Gogolides E., Sawin H. H.
n+-polysilicon etching in CCl4/He discharges: Characterization and modeling
(1989) Journal of the Electrochemical Society, 136 (4), pp. 1147-1154.

• Gogolides E., Nicolai J.-P., Sawin H.H.
Comparison of experimental measurements and model predictions for radiofrequency Ar and SF6 discharges,
(1989) Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films), vol.7,
(no.3, pt.1):1001-6.

Plasma Group Home Page Institute of Microelectronics Home Page