Project Information per year
2012- 2011 - 2010 - 2009 -2008 - 2007 - 2006 - 2005 - 2004

PROJECT I.2
LITHOGRAPHY and Plasma processes for ELECTRONICS, MICROFLUIDCS, and SURFACE Nano-ENGINEERING

Project leader: Dr E. Gogolides

Key researchers: Dr E. Gogolides, Dr A. Tserepi

Collaborating researchers: Dr K. Misiakos, Dr P. Argitis, Dr I. Raptis

Post-doctorals: Dr G. Patsis, Dr V. Constantoudis, Dr G. Kokkoris

PhD candidates: P. Bayiati, N. Vourdas

External collaborators:Prof.A. Boudouvis (NTUA), Dr P. Leunissen (IMEC), Prof. Th. Christopoulos (U. Patras), Y. Wang, J. Roberts (INTEL), Dr S. Kakabakos (IRRP, NCSR-Demokritos), Dr P. Petrou (IRRP, NCSR-Demokritos)

 Funding:

Research orientation:

Our work in nanolithography focused on metrology and simulation of Line Edge Roughness, a side effect of the nanoscale era, which has deleterious effects on transistor operation.  We have developed a protocol and software for LER measurement from SEM images.  In addition, we are improving a stochastic nanolithography simulator to design processes with minimal LER.  This work is in strong collaboration with IMEC and INTEL. 
Microfluidics fabrication and actuation has consumed significant effort.  A platform technology based on soft lithography has been complemented with sealing processes used for fabrication of microfluidic devices.  We are also proposing an alternative technology for microfluidics patterned on polymeric substrates using plasma etching and plasma functionalisation.  First results have been achieved on plexiglass.  Selective plasma deposition of polymers has been used to create open channel microfluidics actuated with electrowetting.  We demonstrated movement of protein solutions without protein loss on the surface. 
Nanotexturing of polymers with plasmas has produced impressive results for PDMS where nanocolumns were created and superhydrophobicity was demonstrated.  A patent was filed and applications on Microfluidics are being designed.  Nanotexturing and nanoroughness creation from plasmas is being probed with Monte Carlo simulations. 
Finally, topography evolution during plasma etching was investigated for deep silicon etching using our Integrated Plasma Topography Evolution Simulator in order to achieve very high aspect ratios and propose parameter ramping strategies.  This work is significant for MEMS fabrication.