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Project Information per year
2012 - 2011 - 2010 - 2009 - 2008 - 2007 - 2006 - 2005 - 2004
MATERIALS AND DEVICES FOR MEMORY APPLICATIONS
This new title of project II.2 (instead of nanocrystal memories) is more representative of our last 2 year-activities
Project leader: P.Normand
Key researchers: P. Normand, V. Ioannou-Sougleridis, P. Dimitrakis
Collaborating Researchers: P. Argitis, N. Glezos
Post-doctorals: E. Kapetanakis, V. Em. Vamvakas
PhD candidate: P. Goupidenis
Objectives
- Development of high-throughput synthesis routes to create functional dielectrics and nanostructured materials for electronic memory applications.
- Study of the structural and electrical properties of the generated materials and demonstration of material functionality enabling the development of low-voltage high-density memory devices.
- Realization and testing of memory devices and manufacturability assessment of the developed fabrication routes in an industrial environment.
Funding
- NEON, Nanocrystals for Electronic Applications, EU GROWTH GRD1, No 25619
- Bilateral French-Greek Project, Si-Nanocrystal Synthesis by Plasma-Immersion Ion-Implantation for Non-Volatile Memory Applications, ΕPΑΝ. Μ.4.3.6.1E.
Activities
Our research activities in generating and evaluating new materials and structures for memory applications started in 1996 with the development of the low-energy ion-beam-synthesis (LE-IBS) technique. Two-dimensional arrays of Si nanocrystals in thin gate dielectrics were demonstrated and successfully exploited in the fabrication of nanocrystal memories (NCMs). This activity was first supported by the EU project, FASEM (1997-2000). LE-IBS development with target the realization of non-volatile NCMs in an industrial environment has been conducted further within the framework of the EU project, NEON (2001-2004), in collaboration with the US implanter manufacturer Axcelis.
In addition to our LE-IBS-NCM activities, major efforts have been devoted the last five years for examining novel NCMs alternatives including: (a) Memory devices by Si+ irradiation through poly-Si/SiO2 gate stack in collaboration with FZR and ZMD AG both sited in Dresden (DE), (b) Memory devices using Ge-NCs produced by MBE in collaboration with Aarhus Univ. (DK), (c) hybrid silicon-organic and SiGe-organic memories in collaboration with Durham Univ. (UK); this last activity was conducted within the framework of the EU IST-FET project, FRACTURE (2001-2003), (d) formation of LE-IBS Ge-NCs in high-k dielectrics in collaboration with CEMES/CNRS (FR), FZR Dresden and CambridgeNanoTech (USA).
In 2007, our main activities focused on the following tasks: (A) Wet oxidation of silicon nitride implanted with low-energy Si ions for ONO memory stacks in collaboration with CEMES/CNRS and MDM-INFM (IT), (B) MOS structures with low-energy Ge-implanted thin gate oxides in collaboration with LETI/CEA (FR), (C) Room-temperature silicon oxidation by high-density helicon plasma reactor, in collaboration with project I.2 and NTUA (GR), (D) Proton radiation tolerance of nanocrystal memories in collaboration with NTUA and, (E) Formation of Si nanocrystals in thin SiO2 layers by PIII in collaboration with CEMES/CNRS and Ion-Beam-Services (IBS, French SME)
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Research
