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Project Information per year
2012 - 2011 - 2010 - 2009 - 2008 - 2007 - 2006 - 2005 - 2004
MATERIALS AND DEVICES FOR MEMORY APPLICATIONS
This new title of project II.2 (instead of nanocrystal memories) is more representative of our last 2 year-activities
Project leader: P.Normand
Key researchers: V. Ioannou-Sougleridis, P. Dimitrakis
Collaborating Researchers: P. Argitis, N. Glezos, A.M. Douvas
Post-doctorals: E. Kapetanakis*, E. Makarona, D. Velessiotis
PhD candidate: P. Goupidenis
*From June 2008: Assistant Professor at the Department of Electronics, TEI Crete
Objectives
- Development of functional dielectrics and nanostructured materials for inorganic/organic memory applications.
- Study of the structural and electrical properties of the generated materials and demonstration of material functionality enabling the development of low-voltage memory devices.
- Realization and testing of memory devices and manufacturability assessment of the developed fabrication routes in an industrial env
Funding
- Bilateral French-Greek Project, Si-Nanocrystal Synthesis by Plasma-Immersion Ion-Implantation for Non-Volatile Memory Applications, ΕPΑΝ. Μ.4.3.6.1E.
- III-Nitrides quantum dots-resonant tunneling diodes as tunable wavelength UV-VIS phototodetectors, European Space Agency (ESA), RFQ No. 3-12083
Activities
Our research activities in materials and structures for memory applications started in 1996 with the development of the low-energy ion-beam-synthesis (LE-IBS) technique in collaboration with Salford University (UK). Two-dimensional arrays of Si nanocrystals in thin gate dielectrics were demonstrated and further exploited in the fabrication of nanocrystal memories (NCMs). This activity was first supported by the EU project, FASEM (1997-2000). LE-IBS development with target the realization of non-volatile NCMs in an industrial environment has been conducted further within the framework of the EU project, NEON (2001-2004), in collaboration with the US implanter manufacturer, Axcelis.
In addition to our LE-IBS-NCM activities, major efforts have been devoted the last few years to novel NCMs alternatives including: (a) Memory devices by Si+ irradiation through poly-Si/SiO2 gate stack (Collaborators –CLRs-: FZR and ZMD AG both sited in Dresden (DE)), (b) Memory devices using Ge-NCs produced by MBE (CLR: Aarhus Univ. (DK)), (c) hybrid silicon-organic and SiGe-organic memories (CLR: Durham Univ. (UK)); this last activity was conducted within the framework of the EU project, FRACTURE (2001-2003), (d) formation of LE-IBS Ge-NCs in high-k dielectrics (CLRs: CEMES/CNRS (FR), FZR Dresden and Cambridge NanoTech (USA)), (e) Formation of Si NCs in thin SiO2 layers by Plasma Immersion (CLRs: CEMES/CNRS & Ion-Beam-Services (IBS, FR)), (f) Wet oxidation of silicon nitride implanted with low-energy Si ions for ONO memory stacks (CLRs: CEMES/CNRS and MDM-INFM (IT)), (g) MOS structures with low-energy Ge-implanted thin gate oxides (CLR: LETI/CEA (FR)), (h) Proton radiation tolerance of nanocrystal memories (CLR: NTUA (GR)), (i) Fabrication and characterization of SiO2 films with Si NCs obtained by stencil-masked LE-IBS (CLR: CEMES/CNRS and INSA Toulouse (FR)).
In 2008, our main activities focused on the following tasks: (A) Molecular storage elements for proton memory devices (CLRs: IMEL’s projects I.2 & II.3), (B) Fluorene-based cross-bar organic memory device (CLRs: NTUA and Durham Univ.), (C) High-k dielectrics stacks for advanced non-volatile memory devices (CLRs: Helsinki Univ. (FI) & IMS/NCSR’D’ (GR)), (D) III-Nitrides quantum dots-resonant tunneling diodes as tunable wavelength UV-VIS phototodetectors (CLR: MRG/FORTH (GR)), (E) Fabrication and characterization of Ge diodes (CLR: IMS/NCSR’D’).
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Research
