Project Information per year
2012 - 2011 - 2010 - 2009 - 2008 - 2007 - 2006 - 2005 - 2004

PROJECT III.4
THIN FILM DEVICES FOR LARGE AREA ELECTRONICS

Project leader: Dr. D.N. Kouvatsos
Collaborating researchers from other projects: Dr. F.V. Farmakis, Dr. D. Davazoglou
Ph.D. candidates: D.C. Moschou, G.P. Kontogiannopoulos, L. Michalas.
External collaborators: Dr. G.J. Papaioannou (University of Athens), Dr. M. Exarchos (Royal Holloway University of London), Dr. N. Stojadinovic (University of Nis), Dr. A.T. Voutsas (Sharp Laboratories of America).

Funding

Objectives

This research aims at the optimization of the active layer of polysilicon films obtained using advanced excimer laser crystallization methods and of the resulting performance parameters of thin film transistors (TFTs) fabricated in such films. Such advanced TFTs are necessary for next generation large area electronics systems, which are now in the research and development phase. Specifically, the targets of the project are:

• Evaluation of device parameter hot carrier and irradiation stress-induced degradation and identification of ageing mechanisms in TFTs fabricated in advanced excimer laser annealed (ELA) polysilicon films with sequential lateral solidification (SLS).
• Investigation of the influence of the crystallization technique and the film thickness on TFT performance, defect densities and degradation for technology optimization.
• Investigation of effects of variations in TFT device structure and in the fabrication process on device performance and reliability.
• Investigation of polysilicon active layer defects using transient drain current analysis in ELA TFTs.
• Assessment of material properties of ELA poly-Si TFTs using optical measurements.



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