Project Information per year
2012 - 2011 - 2010 - 2009 - 2008 - 2007 - 2006 - 2005 - 2004

PROJECT III.4
THIN FILM DEVICES FOR LARGE AREA ELECTRONICS

Project leader: D.N. Kouvatsos
Other collaborating researchers: D. Davazoglou, F.V. Farmakis
Ph.D. candidates: D.C. Moschou, G.P. Kontogiannopoulos, L. Michalas (University of Athens).
Ph.D. degrees: M. Exarchos (University of Athens).

Funding

- PENED contract, project code 03ED550, 19/12/2005 – 18/12/2008.
- GSRT bilateral project Greece-Serbia, Polysilicon TFT reliability, 1/11/2004 – 31/10/2006.

Objectives

This research aims at the optimization of the active layer of polysilicon films obtained using advanced excimer laser crystallization methods and of the resulting performance parameters of thin film transistors fabricated in such films. Specifically, the targets are:
- Investigation of the influence of the polysilicon crystallization technique and film thickness on TFT performance, defect densities and degradation for ELA technology optimization.
- Evaluation of device parameter (a) hot carrier and (b) irradiation stress-induced degradation and identification of ageing mechanisms in TFTs fabricated in advanced excimer laser annealed (ELA) polysilicon films.
- Investigation of effects of variations in TFT structure and fabrication process on device performance and reliability.
- Investigation of polysilicon active layer defects using transient drain current analysis in ELA TFTs.
- Evaluation of bias stress-induced instabilities in solid phase crystallized (SPC) TFTs.